IRF7504TR Allicdata Electronics

IRF7504TR Discrete Semiconductor Products

Allicdata Part #:

IRF7504TR-ND

Manufacturer Part#:

IRF7504TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2P-CH 20V 1.7A MICRO8
More Detail: Mosfet Array 2 P-Channel (Dual) 20V 1.7A 1.25W Sur...
DataSheet: IRF7504TR datasheetIRF7504TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 700mV @ 250µA
Base Part Number: IRF7504
Supplier Device Package: Micro8™
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRF7504TR is a vertical Integrated FET (VFET) and a high power Field Effect Transistor (FET) designed to provide reliable performance in both high power and low power designs. This semiconductor device offers a wide range of features and benefits, as well as excellent flexibility and performance in several application fields. In this article, we will discuss the application fields and working principle of the IRF7504TR.

The IRF7504TR is used in a wide variety of applications, including load switches, low side switches, power converters, power distribution systems, voltage regulators and many other high-power applications. This device is also well suited for applications where the operating power is low but the load current is high, such as low-side switches in automotive applications, power transistors in home appliances, and in other low-power power management applications. Furthermore, the device features a robust architecture and is ideal for applications that require extremely fast switching cycles and require low drive power.

In terms of its working principle, the IRF7504TR is basically a Vertical FET that consists of several interconnected N-channel insulated-gate devices, with the central transistor serving as the driver, and the periphery transistors serving as the switches. When voltage is applied to the gate of the FET, it modulates the resistance between its source and drain, allowing current to flow through the circuit. This modulation of the resistance can affect the voltage or current flow through the circuit, causing it to switch off or on, depending on the application. The device is also designed to have a wide input voltage range and to provide a stable output voltage when driven with different supply voltages.

Additionally, the device is built on a proprietary process technology, which allows for low power and fast switching speeds. This makes it ideal for high switching frequency applications such as frequency synthesizers and converters, as well as for advanced power management functions in computers and embedded systems. The device also features low capacitive parasitics, which enables it to perform well in high switching speed applications, providing an improved response time for improved efficiency.

Overall, the IRF7504TR is an extremely versatile device that can be used in a wide variety of applications. Its robust architecture and fast switching capabilities make it ideal for high switching frequency applications, while its low power consumption and low capacitive parasitics make it suitable for low-power power management applications. In addition, its wide input voltage range and excellent stability provide excellent performance in many application fields.

The specific data is subject to PDF, and the above content is for reference

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