Allicdata Part #: | IRF7507PBF-ND |
Manufacturer Part#: |
IRF7507PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N/P-CH DUAL 20V MICRO-8 |
More Detail: | Mosfet Array N and P-Channel 20V 2.4A, 1.7A 1.25W ... |
DataSheet: | IRF7507PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Discontinued at Digi-Key |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A, 1.7A |
Rds On (Max) @ Id, Vgs: | 140 mOhm @ 1.7A, 4.5V |
Vgs(th) (Max) @ Id: | 700mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 260pF @ 15V |
Power - Max: | 1.25W |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: | Micro8™ |
Base Part Number: | IRF7507PBF |
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IRF7507PBF devices are a type of array used in power moshing (MOSFET) circuits. As a n-channel enhancement mode field-effect transistor, the IRF7507PBF devices are made up of many small structures, each of which performs the same basic task but using different sizes and configurations. In other words, they are devices that can act as multiple parallel connections, allowing a wider range of voltages and currents to flow through each unit. This makes them especially useful in high-current and high-voltage applications.
In terms of operation, the most important elements of an IRF7507PBF device are the drain, source, and gate. The drain is where the majority of the current flows from; the source is the area from which the current enters the IRF7507PBF device. Finally, the gate is the region between the drain and source, and it controls the amount of current that can flow through the device at any given time, depending on the voltage applied. In addition, there are two additional pins on the device (body and transistor) that can be used to further control the operation of the out device.
The main purpose of using IRF7507PBF Array devices is to control current flow in an efficient and reliable manner. As the name implies, they are used to power motors, in power supplies, and in other high-power devices. The high-power densities of these devices, along with their ability to be electrically configured, makes them suitable for a wide range of applications. In comparison to other power moshing solutions, these devices offer more flexibility and ease of integration into an overall power scheme.
In terms of application fields, IRF7507PBF devices are useful when there is a power application requiring a very high current, or a very high-power device that needs to be controlled by a single device. Specifically, they are commonly used in battery charging systems, electric motors, inverters, and load switching and control circuits. In addition, due to their high-power densities, these devices are also well-suited for powering high-speed transceivers, sensitive high-speed power management systems, high-exposure laser systems, and other high-performance systems.
In conclusion, IRF7507PBF devices provide an excellent solution for applications that require a wide range of voltages and currents that need to be kept at a consistent level. They are able to achieve this due to their high-power densities, and their ability to be easily configured and integrated into a power scheme. The devices are often used in motor control, power supplies, and other high-power applications, and they offer plenty of flexibility and ease of use when it comes to powering high-speed transceivers, delicate power management systems, and other high-performance devices.
The specific data is subject to PDF, and the above content is for reference
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