IRF7530PBF

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IRF7530PBF is a surface-mount power metal-oxide-semiconductor field-effect transistor (MOSFET) array. It is a logic-level MOSFET. It consists of five cascode N-channel enhancement-mode MOSFETs, electrically equivalent to five discrete transistors connected in parallel, sharing a common source and sourced by two external signals. The five output MOSFETs are packaged into a Dual Inline (DIP) power package. The IRF7530PBF can operate in both anon and off state. The on-state is characterized by turn-on at logic 0, whereby the gate voltage is below the threshold voltage, and the off-state is characterized by turn-off at logic 1, whereby the gate voltage is above the threshold voltage.

The IRF7530PBF is designed to provide maximum efficiency in applications requiring very low drain-source ON-resistance combined with high ON current capability and voltage ratings. It offers very low gate charge, making the part ideal for high-speed switching applications such as those found in power supplies and power amplifiers. The IRF7530PBF has a maximum voltage rating of 600V and a typical RDS(on)value of 28 mΩ. Other highlights of the part include low gate drive power requirements and very lowgate-source capacitance.

Due to its low RDS(on) values and robust design, the IRF7530PBF is suitable for use in power supplies and audio power amplifiers, as well as being well suited for use in amplifier, deflection and logic level applications. The device can be applied in the power control and switchgear, inverter control and switchgear, switchingmode regulator, switchingd-mode power amplifiers, high-power audio amplifiers, high power supplies and high-voltage battery circuits.

The main working principle of a MOSFET is that the conductance of the MOSFET’s channel is modulated by an external electric field. The electric field, generated by the gate source is applied to the channel of the MOSFET, controlling the number of carriers within the channel thereby controlling the current flow. The gate source voltage controls the electric field and therefore the current flow in the device. The MOSFET has a very high input impedance which since it is composed of insulation between the gate and the source.

The IRF7530PBF has a low resistance, high voltage and is immune to noise. It offers high current carrying capability and has low static power consumption and low power and gate drive requirements. Furthermore, the device provides high surge capability, fast rise and fall times, high frequency response and stability. The device is versatile and is capable of providing efficient and cost effective solutions for many power switching and level conversion applications.

Overall, the IRF7530PBF is a robust and cost-effective solution for many switching and level conversion applications requiring robustness, speed and low voltage drive. With an RDS(on) of 28 mΩ, as well as low static power consumption and high current carrying capability, the IRF7530PBF is an ideal solution for any demanding application requiring high efficiency and low voltage operation.

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