Allicdata Part #: | IRF7750TR-ND |
Manufacturer Part#: |
IRF7750TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2P-CH 20V 4.7A 8-TSSOP |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 4.7A 1W Surfac... |
DataSheet: | IRF7750TR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Base Part Number: | IRF7750 |
Supplier Device Package: | 8-TSSOP |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1W |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 4.7A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.7A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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Introduction
The IRF7750TR is a Mosfet power semiconductor device. Mosfets (Metal Oxide Semiconductor Field Effect Transistors) are devices which are used to switch voltages or currents using the gate voltage. It is a three terminal device, with a gate, Drain and Source terminal. The gate terminal is used to control the drain current. The IRF7750TR is part of a family of special IRF7750TR Mosfets that are specifically designed for low voltage and high current applications.
Power Device Ratings
The IRF7750TR offers several important ratings. It can handle a peak pulsed drain current of up to an impressive 18 A, with a drain voltage of 40 V. With a constant drain current of 12 A, the device can operate at a temperature up to 150 °C. The gate voltage and drain-source voltage are rated at 20 V and 40 V, respectively.
Features and Applications
The IRF7750TR is specifically designed to be a power transistor devices, which can handle large amounts of current and voltage. It is perfect for applications such as in energy systems, motor control, digital signal processing, and switching converter applications, or any other devices or circuits which require high power switching.
In addition to its power capabilities, the IRF7750TR also has several impressive features. The device is protected against overheating, is RoHS compliant, and has a low on-resistance. It also offers fast switching speeds and low noise performance, making it perfect for high speed applications. In addition, the device also has an integrated current lock-out circuit, which helps prevents potential damage.
Working Principle
The IRF7750TR operates on the principle of a Mosfet. A Mosfet (Metal Oxide Semiconductor Field Effect Transistor) is a three-terminal device, with a gate, drain, and source terminal. The gate terminal controls the current that flows between the drain and source terminal. The device works by controlling the amount of current that flows between the terminals when the voltage applied to the gate terminal is varied. When the voltage is increased, more current is allowed to flow between the terminals. When the voltage is decreased, less current flows.
Conclusion
The IRF7750TR is an impressive power Mosfet device which is perfect for energy systems, motor control, digital signal processing, and switching converter applications. It offers great power ratings and a host of impressive features such as protection from overheating, RoHS compliance, and fast switching. It is a great device for high power applications.
The specific data is subject to PDF, and the above content is for reference
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