IRF7756 Allicdata Electronics
Allicdata Part #:

IRF7756-ND

Manufacturer Part#:

IRF7756

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2P-CH 12V 4.3A 8-TSSOP
More Detail: Mosfet Array 2 P-Channel (Dual) 12V 4.3A 1W Surfac...
DataSheet: IRF7756 datasheetIRF7756 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: HEXFET®
Packaging: Tube 
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Description

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IRF7756 is a common power MOSFET array, which specific application field and working principle are described in detail in this article.

IRF 7756 is a six element MOSFET array consisting of six N-Channel MOSFETS, often known as a half-bridge array. Each MOSFET of the array is an independent circuit element. The devices can be connected in parallel, in series or in any combination of cascading the devices, to obtain the desired load current trends.

The main application fields of the IRF7756 are power management and motor control in industrial applications, motor drives and power supplies. It is mainly used to switch high currents at high frequency with low loss. It is ideal choice for high voltage, high speed switching applications. It may also be used in other applications which do not draw large amounts of current or necessitate a high voltage module.

The main working principle of the IRF7756 is a directly applied gate-source voltage. Higher power output can be achieved using a higher gate-source voltage. With the right type of gate drivers, the gate will oscillate at a similar frequency and amplitude as the applied voltage. This causes a higher current flow when a certain gate voltage is applied. The device is then able to withstand high currents, up to 200A peak, while maintaining a gate-source voltage that remains constant.

The normal operating conditions for the IRF7756 are between -55°C and 150°C. Power dissipation becomes more efficient as temperature rises. This device is also reliable for operation at up to 85°C, however, the power dissipation must remain less than 0.8W in order to avoid thermal runaway. The device is also able to operate up to the maximum junction temperature of 175°C.

To ensure proper operation of the IRF7756, proper timing and control is essential. To avoid thermal failure, the device must be protected from overcurrent, overvoltage and short circuit conditions. The device must also be equipped with a proper voltage protection circuit, as well as a thermal protection circuit in order to ensure safe operation and failure protection.

In conclusion, the IRF7756 is a versatile and highly efficient MOSFET array which can be used for a variety of applications, including motor drives and power supplies. With its high current capacity, high frequency switching efficiency, and reliable operation at temperatures up to 175°C, the IRF 7756 is perfect for use in industrial applications where reliability and efficiency are essential.

The specific data is subject to PDF, and the above content is for reference

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