IRF7756TRPBF Allicdata Electronics
Allicdata Part #:

IRF7756TRPBFTR-ND

Manufacturer Part#:

IRF7756TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2P-CH 12V 4.3A 8TSSOP
More Detail: Mosfet Array 2 P-Channel (Dual) 12V 4.3A 1W Surfac...
DataSheet: IRF7756TRPBF datasheetIRF7756TRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 900mV @ 250µA
Base Part Number: IRF7756PBF
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

    IRF7756TRPBF application field and working principle

    IRF7756TRPBF is a field effect transistor (FET) designed for switching applications. It contains two input terminals, a gate, and two output terminals, the source and drain. The central terminal, the gate, is connected to a semiconductor substrate and modulates the conductivity of the semiconductor material that makes up the channel between the source and drain. This process depends on the applied voltage on the gate.

    The IRF7756TRPBF is a FET Array, which means it contains a number of transistors in a single package. The device consists of 3,7 single gates and is designed to be used as power MOSFETs switches. It’s output is turned on or off by applying or removing the gate voltage. When the voltage on the gate is positive, the channel is closed and the FET will not allow the current to flow from source to drain.

    The array offers good performance, By bonding isolated submicron gate oxides, quality and uniformities, to both the gate and the source, the array has a very low on-resistance, which means it can be used in high speed switching applications, such as power supplies and other power switches.

    The IRF7756TRPBF offers low input capacitance, which helps to reduce drive power requirements and inverting time delays. The array also has excellent thermal characteristics and can operate at very high temperatures without compromising its performance.

    IRF7756TRPBF is widely used in portable and consumer electronics and automotive applications. It can also be used for audio amplifiers, cellular phones, and other radio frequency applications. In addition, the array is perfect for switching applications in industrial, military and commercial products.

    In summary, the IRF7756TRPBF is a FET array designed for switchability and high speed switching requirements. It offers good performance and thermal stability, and can be used in consumer electronics, automotive and industrial applications, as well as audio amplifiers, cellular phones, and other radio frequency applications.

The specific data is subject to PDF, and the above content is for reference

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