Allicdata Part #: | IRF7901D1-ND |
Manufacturer Part#: |
IRF7901D1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 30V 6.2A 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 6.2A 2W Surfac... |
DataSheet: | IRF7901D1 Datasheet/PDF |
Quantity: | 1000 |
Series: | FETKY™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 6.2A |
Rds On (Max) @ Id, Vgs: | 38 mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 10.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 780pF @ 16V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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The IRF7901D1 is a part of a high voltage, high speed, N-channel field-effect transistor (FET) array with high dV/dt capability, designed to be interfaced directly with a microcontroller, logic, or digital signal processor. This FET array consists of four FET devices in a single package, along with an integrated gate driver with over-temperature fault protection. With its high dV/dt capability, the IRF7901D can provide fast switching operation and low gate charge, even with large unregulated voltages.
The IRF7901D1 can be used in a wide variety of applications, from motor control and automotive applications to consumer electronics, consumer appliances, power supply design, and industrial applications. Its wide range of features makes it ideal for applications where switching speeds are high and performance is of paramount importance. It is also well suited for use in applications that require extremely low power dissipation and high dV/dt. Because of its integrated gate driver and over-temperature fault protection, the IRF7901D1 can also be used in extremely noisy, high dV/dt environments.
The working principle of the IRF7901D1 is based on the standard N-channel FET operating principle. An additional gate connection is included in the package, and the array is designed such that when the charge on the gate of the device is equal to the voltage of the source, the switches are turned on, thus allowing power to be transferred from source to load. This process is known as “pulsed FET switching.” The IRF7901D1 is designed to handle high-frequency signal switching with very low levels of power dissipation, enabling it to be used in a wide range of applications. Additionally, the integrated gate driver and over-temperature fault protection features ensure that the device will not be damaged by excessive electrical or thermal stress.
In summary, the IRF7901D1 is a N-channel FET array with a high dV/dt capability, specifically designed to be used in high power, high-frequency, low power dissipation applications. Its integrated gate driver and over-temperature fault protection enable it to be used in extremely noisy and high dV/dt environments, and its wide range of features make it ideal for use in both motor control and automotive applications, as well as in power supply design, consumer electronics and other industrial applications.
The specific data is subject to PDF, and the above content is for reference
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