Allicdata Part #: | IRF7901D1TR-ND |
Manufacturer Part#: |
IRF7901D1TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 30V 6.2A 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 6.2A 2W Surfac... |
DataSheet: | IRF7901D1TR Datasheet/PDF |
Quantity: | 1000 |
Series: | FETKY™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 6.2A |
Rds On (Max) @ Id, Vgs: | 38 mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 10.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 780pF @ 16V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IRF7901D1TR is a highly reliable, low-power MOSFET transistor array that can be used in a variety of applications. Featuring a source-gate voltage of 20 volts, this product is ideal for use in power management and voltage regulator circuits used in a variety of applications such as automotive, telecommunications, industrial and energy applications. This product has a low gate charge, making it well-suited for use in high-speed switching applications.
An important feature of the IRF7901D1TR is its high input impedance, which enables it to be used as a buffer between high impedance and low impedance circuits, such as switching between microprocessor and logic gates. This feature also makes the product suitable for use in noise-sensitive applications. The device also has an improved drain-source current handling capability, which makes it suitable for use in high current applications.
The IRF7901D1TR is a monolithic, N-channel, enhancement MOSFET transistor array configuration, capable of source or sink switching up to 19.5 volts. The device consists of four individual MOSFETs housed in a single package. The four MOSFETs are configured as two pairs, each pair having a common source connection. Each device is rated at 10 amps, giving it a total of 40 amps maximum current handling capability. The device also has a typical on-state resistance of 0.38 Ohms at 4.5 volts.
The IRF7901D1TR is designed using high insulation film technology which allows for very high switching speeds. This feature makes the device suitable for high-frequency switching applications, such as motor control and switching applications. The device also has a very low threshold voltage, making it suitable for use in low voltage applications.
The IRF7901D1TR also has an excellent thermal performance. The device has built-in thermal protection which helps to reduce the thermal stress on components, therefore reducing the risk of damage during operation. The device also has an improved current handling capability, which makes it suitable for use in high current applications.
In general, the IRF7901D1TR has been designed to be reliable, low power, and versatile in Performance. This makes it suitable for a wide range of applications, including power management, voltage regulation, and high-speed switching. The product\'s low costs, high input impedance and low on-state resistance make it an ideal choice for many application needs.
The specific data is subject to PDF, and the above content is for reference
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