IRF7901D1TRPBF

Vgs(th) (Max) @ Id:	1V @ 250µA
Base Part Number:	IRF7901D1PBF
Supplier Device Package:	8-SO
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	2W
Input Capacitance (Ciss) (Max) @ Vds:	780pF @ 16V
Gate Charge (Qg) (Max) @ Vgs:	10.5nC @ 5V
Series:	FETKY™
Rds On (Max) @ Id, Vgs:	38 mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C:	6.2A
Drain to Source Voltage (Vdss):	30V
FET Feature:	Logic Level Gate
FET Type:	2 N-Channel (Dual)
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The IRF7901D1TRPBF is an advanced technology MOSFET array used in a wide range of applications. The IRF7901D1TRPBF is designed to provide high performance in consumer, automotive and industrial applications such as motor control, power management, lighting and active power supply systems. It has a wide voltage range and low resistive on-state conduction.The IRF7901D1TRPBF array is a four-element high voltage MOSFET device, fabricated using an advanced CMOS process and designed for efficient on-state conduction. The array consists of four n-channel MOSFETs, each with its own Source, Gate and Drain terminals. The Source and Gate of each element can be connected internally to create two separate elements or used as two different FETs with two independent Gates or two different Sources or two independent Drains.The IRF7901D1TRPBF array is designed to provide high efficiency power switching and high resistance off-state conduction, making it suitable for numerous switching applications. The device is capable of passing large currents (up to +50A peak) and high voltage (up to 175V). This is achieved by individually controlling three RDS(ON)s and one VTL (Voltage Transduction Level) across the entire array.The IRF7901D1TRPBF array is also equipped with an ESD protection mechanism. This feature prevents damage from static electricity to the internal circuit elements, allowing for safe and reliable operation in applications. Another benefit of the IRF7901D1TRPBF is its low switching losses. This results in high output current levels and low power losses due to the device’s low capacitance.The IRF7901D1TRPBF array can be used in a wide variety of applications due to its flexibility, efficiency, and power range. It can be used in power switching applications such as motor control, power management, lighting and active power supply systems. The device is also suitable for a range of automotive and industrial systems where high voltage and continuous current levels must be maintained.The IRF7901D1TRPBF array is designed to operate in a wide range of temperatures and can be controlled using logic voltages. The device is delivered in an aluminum PHD package with an exposed source pin for easy thermal management. The device is also designed for efficient stress management and protection against EMI (electro-magnetic interference).This device provides an ideal combination of features such as current and temperature management, low resistive on-state conduction, continuous currents and high-voltage range. The IRF7901D1TRPBF device is a versatile solution for applications demanding efficient power control and management. It is capable of controlling large currents, reducing power losses and ensuring consistent operation. Overall, the IRF7901D1TRPBF is one of the most reliable MOSFET arrays available today.

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