| Allicdata Part #: | IRF7902PBF-ND |
| Manufacturer Part#: |
IRF7902PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 6.4A, 9.7A 1.4... |
| DataSheet: | IRF7902PBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.25V @ 25µA |
| Base Part Number: | IRF7902PBF |
| Supplier Device Package: | 8-SO |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power - Max: | 1.4W, 2W |
| Input Capacitance (Ciss) (Max) @ Vds: | 580pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.9nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 22.6 mOhm @ 6.4A, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6.4A, 9.7A |
| Drain to Source Voltage (Vdss): | 30V |
| FET Feature: | Logic Level Gate |
| FET Type: | 2 N-Channel (Dual) |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRF7902PBF is a depletion-mode vertical double-diffused metal-oxide semiconductor field-effect transistor (DMOSFET). It is made up of two vertical N-channel enhancement-mode integrated transistors that are stacked in a planar array. The DMOSFET has an on-resistance (RDS) of 8Ω (at 10V), a maximum drain-source voltage rating of 120V, and a maximum output power of 33W.
The DMOSFET is typically used in systems that require reliable, low-power devices for power switching applications. It has been used in the automotive industry, robotic control systems, and industrial automation systems. It has also been used in switched-mode power supplies that require higher level of reliability than digital circuits.
The IRF7902PBF has a fast turn-on and turn-off time, as well as relatively fast switching times. Its higher load capacity, compared to other devices in the same power range, adds to its desirability in these types of applications. It has a low gate threshold voltage and is able to switch high voltages and low currents, which makes the IRF7902PBF suitable for low-side switching.
The principle of operation of the DMOSFET is based on a gate structure in which source and drain regions are formed in the form of two vertical transistors. The gate structure is designed in such a way that when a voltage is applied to the gate, a depletion region forms between the source and drain regions. This reduces the overall resistance between the two regions, allowing current to flow through the device. In addition, the IRF7902PBF has an internal body diode, which prevents current from flowing in the reverse direction when the DMOSFET is in an off state.
The IRF7902PBF is also suitable for modifications of the circuit in order to create different circuits, due to its ability to withstand high temperatures and high-voltage loads. It is also compatible with most semiconductor processes, making it suitable for integration into circuits.
The IRF7902PBF is a reliable transistors and has been used in many applications related to automotive electronics, robotics, industrial automation and switched-mode power supplies. Its low gate threshold voltage, low on-resistance and fast switching times, combined with its higher load capacity, make it a desirable component for these applications. It is also compatible with most semiconductor fabrication processes, meaning it can easily be integrated into most circuits.
The specific data is subject to PDF, and the above content is for reference
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IRF7902PBF Datasheet/PDF