| Allicdata Part #: | IRF7904PBF-ND |
| Manufacturer Part#: |
IRF7904PBF |
| Price: | $ 0.70 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET 2N-CH 30V 7.6A/11A 8SOIC |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 7.6A, 11A 1.4W... |
| DataSheet: | IRF7904PBF Datasheet/PDF |
| Quantity: | 3338 |
| 1 +: | $ 0.63630 |
| 10 +: | $ 0.56574 |
| 100 +: | $ 0.44730 |
| 500 +: | $ 0.34689 |
| 1000 +: | $ 0.27386 |
| Vgs(th) (Max) @ Id: | 2.25V @ 25µA |
| Base Part Number: | IRF7904PBF |
| Supplier Device Package: | 8-SO |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power - Max: | 1.4W, 2W |
| Input Capacitance (Ciss) (Max) @ Vds: | 910pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 16.2 mOhm @ 7.6A, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 7.6A, 11A |
| Drain to Source Voltage (Vdss): | 30V |
| FET Feature: | Logic Level Gate |
| FET Type: | 2 N-Channel (Dual) |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IRF7904PBF is a popular MOSFET transistor array that is used in various applications. It is made up of four independent n-channel enhancement MOSFET transistors and each of them has drain and source connections on the same side. This MOSFET transistor array has been designed particularly to protect against a variety of load conditions and to provide such protection even if drain and source lines are interchanged.
The IRF7904PBF application field includes a variety of industrial applications and general radio frequency (RF) applications, including RF mixers and amplifiers. The IRF7904PBF transistor array is also used in voltage controlled switch applications, such as the one which is used to supply the exciter circuit power for a portable radio.
The IRF7904PBF transistor array features a surge and heat rating of 100V and 25A respectively. Its total gate charge is 30nC and its total gate-source capacitive charge is 300pF. The IRF7904PBF also features an on-state resistance of 0.035 Ohm and a maximum drain-source breakdown voltage of 100V. It also has an RDS(on) range between 0.01 and 0.05 Ohms.
The working principle of the IRF7904PBF depends on the application it is used for. In RF applications, this transistor array is used to convert RF signals from one frequency to another. This process is called modulation. It is accomplished by using the drain-source capacitive charge to couple two oscillators and to switch one frequency to another. RF mixers and amplifiers are also used to increase the gain of the frequency signals. In voltage controlled switch applications, the IRF7904PBF is used to protect the exciter circuit from a variety of load conditions and to prevent any current flow interruption when the drain and source lines are interchanged.
To summarize, the IRF7904PBF is a popular MOSFET transistor array which is used in a variety of industrial and RF applications. Its surge and heat ratings are 100V and 25A respectively. Its maximum drain-source breakdown voltage is 100V. Its working principle depends on the particular application it is used for, but generally it is used to convert RF signals from one frequency to another or to protect against a variety of load conditions.
The specific data is subject to PDF, and the above content is for reference
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IRF7904PBF Datasheet/PDF