IRF8313TRPBF Discrete Semiconductor Products |
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Allicdata Part #: | IRF8313TRPBFTR-ND |
Manufacturer Part#: |
IRF8313TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 30V 9.7A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 9.7A 2W Surfac... |
DataSheet: | IRF8313TRPBF Datasheet/PDF |
Quantity: | 16000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 9.7A |
Rds On (Max) @ Id, Vgs: | 15.5 mOhm @ 9.7A, 10V |
Vgs(th) (Max) @ Id: | 2.35V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 760pF @ 15V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Base Part Number: | IRF8313PBF |
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Transistors - FETs, MOSFETs - Arrays
IRF8313TRPBF is an N-Channel 3-Series MOSFET (metal-oxide-semiconductor field-effect transistor) category of devices. This device is available in the TO-252 package that features the latest advanced level MOSFET technology and are qualified for wide temperature range (-55°C to +150°C).
Applications of the device include used in various switching and amplifying circuits like switching converters, amplifiers, switches, etc. It is designed for low power high frequency applications such as audio preamplifiers, DC-DC boosters, switch mode power supplies, and other high-speed switching circuits.
The device is well suited for high-current and moderate speed switching. It is capable of carrying 20A continuously. This makes it ideal for use in applications that require fast switching speeds, such as Frequency Converters, Digital Signal Processing (DSP) circuits, ASIC chips, etc.
The IRF8313TRPBF MOSFET is a three-terminal device with a drain, a source and a gate. The device operates by allowing a small control current at the gate terminal to control the larger current flowing through the drain and source terminals. When a positive voltage is applied to the gate, it attracts the electrons. This reduces the resistance between the source and drain, allowing the current to flow.
The IRF8313TRPBF MOSFET offers high performance, low on-state resistance, high ruggedness, reliability and low power consumption. The device has an RDS(ON) of 90 mOhm, an avalanche rating of 20A and a maximum drain-source voltage (VDSS) of 30V. All these features make the device suitable for use in high-performance, high-current and low voltage switching applications.
The device also has a maximum gate voltage of 5V and a maximum gate-source voltage (VGSS) of 30V. This ensures that the device can withstand higher voltages and still function efficiently. It also has an excellent thermal resistance, allowing it to dissipate heat more effectively.
In conclusion, the IRF8313TRPBF MOSFET is a highly efficient, versatile device that can be used in a wide range of applications. It offers high performance, low power consumption and reliability, making it an ideal choice for high speed switching circuits.
The specific data is subject to PDF, and the above content is for reference
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