IRF8113

Typical Applications

• High speed power switching circuits
• DC-DC converters
• Switch mode power supplies
• Motor drives
• Load switches
• Level/tuned amplifiers
• Crossover circuits
• White goods testing

Device Structure and Working Principle

The IRF8113 is made from two different types of FETs. The source and drain regions are formed from a N-channel FET and the gate region is made from a P-channel FET. This combination of FETs is sometimes referred to as a “heterojunction”. The N-channel FET is responsible for conducting current between the source and drain, while the P-channel FET is responsible for controlling the current between the source and drain. The P-channel FET acts as an insulator, when the gate voltage is low and allows current to flow through the N-channel FET when the gate voltage is high.

In operation, the gate voltage is used to control the current through the device. When the gate voltage is low, the FET is off and no current is allowed to flow through the N-channel. As the gate voltage is increased, the FET begins to conduct and a current is allowed to flow through the N-channel. The amount of current that can flow through the N-channel is determined by the gate voltage and how close the two FETs are together.

The IRF8113 also features a special substrate channel which allows the device to be used at high speed by eliminating resistance and increasing the switching speed. This substrate channel also helps to protect the device from high voltage spikes, which can cause damage to the FET.

Conclusion

The IRF8113 is an excellent choice for any application that requires a low on-state resistance and a high switching speed. The combination of a heterojunction FET design and a substrate channel make it an ideal choice for those applications. Furthermore, the fast rise of current capability and excellent temperature and frequency stability provide reliable performance in a wide range of applications.