| Allicdata Part #: | IRF8327STRPBF-ND |
| Manufacturer Part#: |
IRF8327STRPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 14A SQ |
| More Detail: | N-Channel 30V 14A (Ta), 60A (Tc) 2.2W (Ta), 42W (T... |
| DataSheet: | IRF8327STRPBF Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.4V @ 25µA |
| Package / Case: | DirectFET™ Isometric SQ |
| Supplier Device Package: | DIRECTFET™ SQ |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.2W (Ta), 42W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1430pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 7.3 mOhm @ 14A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 14A (Ta), 60A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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IRF8327STRPBF are a type of field-effect transistors (FETs) that take advantage of an electric field to control the flow of electricity. As the name suggests, these transistors are specifically designed to be used in high-power applications, and the IRF8327STRPBF are no exception. They have a rated current of up to 7 amps and can handle a maximum power of up to 110 watts, making them ideal for a variety of industrial and consumer applications.
The IRF8327STRPBF are single-source, N-channel devices, meaning they allow current to flow from the source to the drain when a voltage is applied to the gate. This type of field-effect transistor is commonly used for switching and amplifying signals, and can also be used to control the speed and direction of motor speeds. These transistors are commonly found in circuit designs that require high power, such as those found in electric vehicles, high-power LED drivers, and high-efficiency power converters.
The working principle of the FET is based on the fact that a voltage applied to the gate will allow electric current to flow from source to drain. The voltage applied to the gate in turn depends on the current flowing through drain to source. This makes them perfect for use in high-power applications, as they can be set up to turn on or off at predefined thresholds of current or voltage.
As with any other FETs, IRF8327STRPBF come with a wide range of features and specifications. Most notably, they offer an extremely low on-resistance, as well as ESD protection (protection from static electricity). They are also highly reliable, with a typical failure rate of less than 1 in 10 million operational hours. In addition, they have a low gate charge and a low total gate charge.
The IRF8327STRPBF are most commonly used in applications such as motor control, DC-DC converters, switching power supplies, and power management systems. They are also used in audio amplifiers, video signals, and RF circuits. Other common applications include battery charging/management, power conditioning circuits, and switching regulators.
In summary, the IRF8327STRPBF are a type of FETs specifically designed for use in high-power applications. They offer an extremely low on-resistance, ESD protection, and high reliability. These transistors are commonly used for motor control, DC-DC converters, switching power supplies, and a wide range of other applications.
The specific data is subject to PDF, and the above content is for reference
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IRF8327STRPBF Datasheet/PDF