Allicdata Part #: | IRF820AS-ND |
Manufacturer Part#: |
IRF820AS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 500V 2.5A D2PAK |
More Detail: | N-Channel 500V 2.5A (Tc) 50W (Tc) Surface Mount D2... |
DataSheet: | IRF820AS Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 340pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRF820AS is a single N-Channel E-Mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a high performance, low noise and low voltage device which performs very well in applications where a small signal need to control current or voltage at low voltage level. The applications for IRF820AS includes power switching, synchronous rectification, power supply design, motor control, audio amplifiers and so on.
The IRF820AS is a short-channel P-Channel Enhancement-Mode MOSFET (E-MOSFET). It is designed using the advanced CMOS process. It is voltage controlled device with a drain source breakdown voltage (BVDSS) of 20V and gate source voltage (VGSS) of 30V. It has a very low RDS(on) of 0.0045ohm, making it ideal for low power circuit design. It also has very low input capacitance making it suitable for high speed switching applications. The maximum Drain Current (ID) at Gate-Source voltage of 4.5V is 28A.
The working principle of IRF820AS is quite simple. When voltage is applied to the gate terminal, an electric field is generated which creates a channel between the source and drain. As the gate voltage increases, the channel widens and the conductivity (Rds) between the source and drain increases. This results into increased current from the source to the drain terminal. When the gate voltage is decreased, the channel width reduces and the conductivity decreases resulting into reduced current from the source to the drain.
The features of IRF820AS make it suitable for a wide range of applications. It is used in power switching applications, such as motor control and synchronous rectification. It is also used in power supplies design, LED lighting, motor drives and audio amplifiers. It is also suitable for low noise and low voltage applications, such as wireless communication, security systems and automotive applications.
In summary, IRF820AS is a single N-Channel E-Mode MOSFET that offers high performance, low noise and low voltage operation. It is suitable for a wide range of applications, such as power switching, synchronous rectification, power supplies design, motor control, audio amplifiers and so on. It is easy to use and generates less heat, making it an ideal choice for low power circuits.
The specific data is subject to PDF, and the above content is for reference
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