| Allicdata Part #: | IRF8736TRPBFTR-ND |
| Manufacturer Part#: |
IRF8736TRPBF |
| Price: | $ 0.13 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 18A 8-SOIC |
| More Detail: | N-Channel 30V 18A (Ta) 2.5W (Ta) Surface Mount 8-S... |
| DataSheet: | IRF8736TRPBF Datasheet/PDF |
| Quantity: | 234 |
| 1 +: | $ 0.12800 |
| 10 +: | $ 0.12416 |
| 100 +: | $ 0.12160 |
| 1000 +: | $ 0.11904 |
| 10000 +: | $ 0.11520 |
| Vgs(th) (Max) @ Id: | 2.35V @ 50µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2315pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 4.8 mOhm @ 18A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 18A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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IRF8736TRPBF is a low power MOSFET transistor that is highly versatile and commonly used in a wide array of applications. It is part of the power MOSFET family, specifically an n-channel enhancement mode field-effect transistor (FET). An IRF8736TRPBF is significant because it has a low drain-to-source “on” resistance, generates high “pulsed” current, and is able to operate at higher switching speed than traditional devices. The IRF8736TRPBF is a highly dependable and easy-to-use power FET transistor. When compared to regular bipolar transistors, it has been designed with better drain-source resistance, high input impedance and lower power dissipation.In order to make use of a IRF8736TRPBF transistor, users need to understand its primary characteristics, as well as the application field and working principle. The application field of an IRF8736TRPBF transistor is primarily in the area of power switching applications, such as lighting, power supply control, motor speed control and power amplifiers. This type of transistor is also great for use in home appliances. With its low on-resistance, high frequency and fast switching characteristics, it is the perfect choice for applications that require high performance levels. The working principle of the IRF8736TRPBF transistor involves the movement of charge carriers between the source and drain, either through the channel or through the gate. In an n-channel power MOSFET, the source is negative and the drain is positive. When the gate is given a positive voltage, the positively charged particles in the channel (or "holes") are drawn from the source towards the gate, which in turn creates a drain-source path for current flow. In order to ensure that the device operates correctly, the gate-source voltage should not exceed the maximum gate-source threshold voltage (VGS). Additionally, when using this type of transistor, the operating temperature range should not go beyond the maximum range specified by the manufacturer. The IRF8736TRPBF transistor is a great way to quickly and affordably increase the performance of one\'s system with increased reliability and functional longevity. Once users have a better understanding of its application field and working principle, they will have a much easier time implementing this device in their projects.
The specific data is subject to PDF, and the above content is for reference
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IRF8736TRPBF Datasheet/PDF