IRF840ASTRLPBF

The IRF840ASTRLPBF is a single N-Channel MOSFET transistor for use in power electronic applications. It is designed to provide high switching speeds and low on-resistance with low gate charge. This MOSFET has a maximum drain-source voltage of 400 V and 60 A continuous drain current with a current derating of 4 A/°C above 177 °C.

This MOSFET is ideal for applications such as audio amplifiers, HVAC controls, servo drive inverters, motor control applications, isolated gate drivers, and switch mode power supplies. It also finds use in applications that require speed, low gate charge, and low on-resistance, such as those that utilize load switches, battery chargers, and motor control.

This MOSFET features a Logic Level Gate Drive, which means that the voltage needed to turn on the transistor is lower than the typical 11 V to 13 V used in non-Logic Level MOSFETs. This reduces the power dissipated when the gate drive is enabled and in turn increases the MOSFET’s efficiency. It also has a high surge gate resistance and is capable of withstanding gate voltages up to 30 V.

The IRF840ASTRLPBF has an intrinsically-low gate charge of 8.2 nC. This means that when the gate voltage is increased, less energy is required to switch the transistor on, which reduces the power dissipation, increases the speed of the transistor, and allows the use of smaller gate-drive components. Additionally, the MOSFET has an RDS(on) of 0.042 which ensures excellent conduction when the transistor is on.

The working principle of this MOSFET is similar to that of an NPN transistor. It has a gate, drain and source regions. When the gate voltage is increased, it creates an electric field which pushes the electrons from the source towards the drain. This in turn creates a channel between the source and drain, allowing the flow of current between them. When the gate voltage is reduced, the electrons are pushed away and the channel is closed, turning the transistor off. Thus, the transistor can be used as an electronic switch that can be turned on and off by controlling the gate voltage.

In conclusion, the IRF840ASTRLPBF is an excellent choice for applications that require speed, low gate charge, and low on-resistance. It has a maximum drain-source voltage of 400 V and 60 A continuous drain current with a current derating of 4 A/°C above 177 °C and features a Logic Level Gate Drive. It has an intrinsically low gate charge of 8.2 nC and an RDS(on) of 0.042. The working principle of this MOSFET is similar to that of an NPN transistor and it can be used as an electronic switch that can be turned on and off by controlling the gate voltage.