IRF820ASTRL

IRF820ASTRL is a type of high-performance N-channel MOSFET, belonging to the family of single, Field Effect Transistors (FETs). It is widely used in power control, as well as in audio, video, etc. applications. This article explores the field of applications and working principle of the IRF820ASTRL.Application FieldThe IRF820ASTRL is a single, N-channel MOSFET. It has low drain-source on-state resistance and improved gate charge, and is used in a variety of power control, display, communications and computing applications.

• Power Control - The IRF820ASTRL can be used as a switch in power control systems, such as motor control and power-saving systems.
• Display Applications - The IRF820ASTRL is also used in Liquid Crystal Display (LCD) backlighting circuitry.
• Communications - The IRF820ASTRL is used in wired and wireless communications, in power amplifiers and other RF applications.
• Computing - The IRF820ASTRL is used in the core logic circuits of computers, as well as in memory systems.
• Audio - The IRF820ASTRL is used in audio amplifiers and other audio applications.

Working PrincipleThe IRF820ASTRL is a metal–oxide–semiconductor field-effect transistor (MOSFET), which is a type of field effect transistor. The "metal–oxide–semiconductor" (MOS) part of the name comes from the metal-oxide gate material that lies between the gate terminal and the semiconductor channel. The FET\'s drain–source channel acts as an electrically controlled resistor, and the voltage applied to the gate terminal determines the inversion-layer resistance of the channel. The controlling action of the MOSFET is analogous to a three-terminal variable resistor.When there is no voltage at the gate, the drain–source channel is non-conductive and no current flows through it. When a positive voltage is applied to the gate, the channel inverts and becomes conductive, allowing current to flow. As the gate voltage is increased, the channel resistance decreases and the drain current increases exponentially. The MOSFET can thus be used to control the drain current with a relatively small change in gate voltage.The IRF820ASTRL is designed to have low on-state resistance (Ron) and high switching speed. It has a drain-source breakdown voltage of 350 V, and an on-state current rating of up to 8A. The on resistance is typically very low, between 8 mΩ and 10 mΩ. The maximum power dissipation (or maximum power can be handled) is 80 Watts which is a good value for IRF820ASTRL.To increase reliability and prolong the life of the MOSFET, the IRF820ASTRL includes an over-temperature protection (OTP) feature. The OTP circuitry monitors the junction temperature of the MOSFET and shuts off the device if it exceeds a certain threshold. In conclusion, the IRF820ASTRL is a high-performance, single, N-channel MOSFET widely used in a variety of power control, display, communications and computing applications. The device has low drain-source on-state resistance, improved gate charge and an OTP feature for increased reliability.

IRF8252TRPBF	Infineon Tec...	--	1000	MOSFET N-CH 25V 25A 8-SON...
IRF840B	ON Semicondu...	--	1000	MOSFET N-CH 500V 8A TO-22...
IRF820ASPBF	Vishay Silic...	--	1110	MOSFET N-CH 500V 2.5A D2P...
IRF840LCPBF	Vishay Silic...	--	785	MOSFET N-CH 500V 8A TO-22...
IRF830ASPBF	Vishay Silic...	1.45 $	77	MOSFET N-CH 500V 5A D2PAK...
IRF830SPBF	Vishay Silic...	--	1000	MOSFET N-CH 500V 4.5A D2P...
IRF8327STR1PBF	Infineon Tec...	0.0 $	1000	MOSFET N-CH 30V 14A SQN-C...
IRF8302MTR1PBF	Infineon Tec...	0.0 $	1000	MOSFET N CH 30V 31A MXN-C...
IRF8304MTR1PBF	Infineon Tec...	0.0 $	1000	MOSFET N-CH 30V 28A MXN-C...
IRF8308MTR1PBF	Infineon Tec...	0.0 $	1000	MOSFET N-CH 30V 27A MXN-C...
IRF8306MTRPBF	Infineon Tec...	--	1000	MOSFET N-CH 30V 23A DIREC...
IRF8306MTR1PBF	Infineon Tec...	0.0 $	1000	MOSFET N-CH 30V 23A DIREC...
IRF8010PBF	Infineon Tec...	--	497	MOSFET N-CH 100V 80A TO-2...
IRF840ASPBF	Vishay Silic...	--	977	MOSFET N-CH 500V 8A D2PAK...
IRF840	STMicroelect...	--	117	MOSFET N-CH 500V 8A TO-22...
IRF830	STMicroelect...	--	1000	MOSFET N-CH 500V 4.5A TO-...
IRF820	STMicroelect...	--	1000	MOSFET N-CH 500V 4A TO-22...
IRF820S	Vishay Silic...	0.0 $	1000	MOSFET N-CH 500V 2.5A D2P...
IRF830S	Vishay Silic...	--	1000	MOSFET N-CH 500V 4.5A D2P...
IRF840S	Vishay Silic...	--	1000	MOSFET N-CH 500V 8A D2PAK...
IRF830AS	Vishay Silic...	0.0 $	1000	MOSFET N-CH 500V 5A D2PAK...
IRF840A	Vishay Silic...	--	380	MOSFET N-CH 500V 8A TO-22...
IRF840AS	Vishay Silic...	0.0 $	1000	MOSFET N-CH 500V 8A D2PAK...
IRF840L	Vishay Silic...	--	1000	MOSFET N-CH 500V 8A TO-26...
IRF820AS	Vishay Silic...	--	1000	MOSFET N-CH 500V 2.5A D2P...
IRF840LCS	Vishay Silic...	0.0 $	1000	MOSFET N-CH 500V 8A D2PAK...
IRF820A	Vishay Silic...	--	1000	MOSFET N-CH 500V 2.5A TO-...
IRF820AL	Vishay Silic...	0.0 $	1000	MOSFET N-CH 500V 2.5A TO-...
IRF830AL	Vishay Silic...	0.0 $	1000	MOSFET N-CH 500V 5A TO262...
IRF840LCL	Vishay Silic...	0.0 $	1000	MOSFET N-CH 500V 8A TO-26...
IRF8113PBF	Infineon Tec...	0.0 $	1000	MOSFET N-CH 30V 17.2A 8-S...
IRF820ASTRL	Vishay Silic...	0.0 $	1000	MOSFET N-CH 500V 2.5A D2P...
IRF820ASTRR	Vishay Silic...	0.0 $	1000	MOSFET N-CH 500V 2.5A D2P...
IRF820L	Vishay Silic...	0.0 $	1000	MOSFET N-CH 500V 2.5A TO-...
IRF820STRL	Vishay Silic...	0.0 $	1000	MOSFET N-CH 500V 2.5A D2P...
IRF820STRR	Vishay Silic...	--	1000	MOSFET N-CH 500V 2.5A D2P...
IRF830ASTRL	Vishay Silic...	0.0 $	1000	MOSFET N-CH 500V 5A D2PAK...
IRF830L	Vishay Silic...	--	1000	MOSFET N-CH 500V 4.5A TO-...
IRF830STRL	Vishay Silic...	--	1000	MOSFET N-CH 500V 4.5A D2P...
IRF830STRR	Vishay Silic...	0.0 $	1000	MOSFET N-CH 500V 4.5A D2P...