IRF820ASTRL

IRF820ASTRL is a type of high-performance N-channel MOSFET, belonging to the family of single, Field Effect Transistors (FETs). It is widely used in power control, as well as in audio, video, etc. applications. This article explores the field of applications and working principle of the IRF820ASTRL.Application FieldThe IRF820ASTRL is a single, N-channel MOSFET. It has low drain-source on-state resistance and improved gate charge, and is used in a variety of power control, display, communications and computing applications.

• Power Control - The IRF820ASTRL can be used as a switch in power control systems, such as motor control and power-saving systems.
• Display Applications - The IRF820ASTRL is also used in Liquid Crystal Display (LCD) backlighting circuitry.
• Communications - The IRF820ASTRL is used in wired and wireless communications, in power amplifiers and other RF applications.
• Computing - The IRF820ASTRL is used in the core logic circuits of computers, as well as in memory systems.
• Audio - The IRF820ASTRL is used in audio amplifiers and other audio applications.

Working PrincipleThe IRF820ASTRL is a metal–oxide–semiconductor field-effect transistor (MOSFET), which is a type of field effect transistor. The "metal–oxide–semiconductor" (MOS) part of the name comes from the metal-oxide gate material that lies between the gate terminal and the semiconductor channel. The FET\'s drain–source channel acts as an electrically controlled resistor, and the voltage applied to the gate terminal determines the inversion-layer resistance of the channel. The controlling action of the MOSFET is analogous to a three-terminal variable resistor.When there is no voltage at the gate, the drain–source channel is non-conductive and no current flows through it. When a positive voltage is applied to the gate, the channel inverts and becomes conductive, allowing current to flow. As the gate voltage is increased, the channel resistance decreases and the drain current increases exponentially. The MOSFET can thus be used to control the drain current with a relatively small change in gate voltage.The IRF820ASTRL is designed to have low on-state resistance (Ron) and high switching speed. It has a drain-source breakdown voltage of 350 V, and an on-state current rating of up to 8A. The on resistance is typically very low, between 8 mΩ and 10 mΩ. The maximum power dissipation (or maximum power can be handled) is 80 Watts which is a good value for IRF820ASTRL.To increase reliability and prolong the life of the MOSFET, the IRF820ASTRL includes an over-temperature protection (OTP) feature. The OTP circuitry monitors the junction temperature of the MOSFET and shuts off the device if it exceeds a certain threshold. In conclusion, the IRF820ASTRL is a high-performance, single, N-channel MOSFET widely used in a variety of power control, display, communications and computing applications. The device has low drain-source on-state resistance, improved gate charge and an OTP feature for increased reliability.

IRF8714TRPBF	Infineon Tec...	--	1688	MOSFET N-CH 30V 14A 8-SOI...
IRF8734TRPBF	Infineon Tec...	--	4000	MOSFET N-CH 30V 21A 8-SOI...
IRF830ASTRLPBF	Vishay Silic...	0.97 $	1000	MOSFET N-CH 500V 5A D2PAK...
IRF8852TRPBF	Infineon Tec...	0.0 $	1000	MOSFET 2N-CH 25V 7.8A 8TS...
IRF840ASTRLPBF	Vishay Silic...	0.85 $	800	MOSFET N-CH 500V 8A D2PAK...
IRF840ALPBF	Vishay Silic...	2.23 $	1000	MOSFET N-CH 500V 8A TO-26...
IRF830AS	Vishay Silic...	0.0 $	1000	MOSFET N-CH 500V 5A D2PAK...
IRF820APBF	Vishay Silic...	--	302	MOSFET N-CH 500V 2.5A TO-...
IRF8113	Infineon Tec...	--	1000	MOSFET N-CH 30V 17.2A 8-S...
IRF8010PBF	Infineon Tec...	--	497	MOSFET N-CH 100V 80A TO-2...
IRF840	STMicroelect...	--	117	MOSFET N-CH 500V 8A TO-22...
IRF840SPBF	Vishay Silic...	--	1640	MOSFET N-CH 500V 8A D2PAK...
IRF8306MTRPBF	Infineon Tec...	--	1000	MOSFET N-CH 30V 23A DIREC...
IRF8513PBF	Infineon Tec...	--	1000	MOSFET 2N-CH 30V 8A/11A 8...
IRF830L	Vishay Silic...	--	1000	MOSFET N-CH 500V 4.5A TO-...
IRF840S	Vishay Silic...	--	1000	MOSFET N-CH 500V 8A D2PAK...
IRF840LCSTRL	Vishay Silic...	--	1000	MOSFET N-CH 500V 8A D2PAK...
IRF8313PBF	Infineon Tec...	--	1000	MOSFET 2N-CH 30V 9.7A 8-S...
IRF8113TRPBF	Infineon Tec...	--	1000	MOSFET N-CH 30V 17.2A 8-S...
IRF8327STR1PBF	Infineon Tec...	0.0 $	1000	MOSFET N-CH 30V 14A SQN-C...
IRF820STRRPBF	Vishay Silic...	0.76 $	1000	MOSFET N-CH 500V 2.5A D2P...
IRF8327STRPBF	Infineon Tec...	--	1000	MOSFET N-CH 30V 14A SQN-C...
IRF8721TRPBF	Infineon Tec...	--	8000	MOSFET N-CH 30V 14A 8-SOI...
IRF820AS	Vishay Silic...	--	1000	MOSFET N-CH 500V 2.5A D2P...
IRF840LCSPBF	Vishay Silic...	--	1000	MOSFET N-CH 500V 8A D2PAK...
IRF820ASTRL	Vishay Silic...	0.0 $	1000	MOSFET N-CH 500V 2.5A D2P...
IRF830A	Vishay Silic...	--	1000	MOSFET N-CH 500V 5A TO-22...
IRF8714PBF	Infineon Tec...	--	2813	MOSFET N-CH 30V 14A 8-SOI...
IRF840LCS	Vishay Silic...	0.0 $	1000	MOSFET N-CH 500V 8A D2PAK...
IRF8714GTRPBF	Infineon Tec...	0.22 $	1000	MOSFET N-CH 30V 14A 8-SOI...
IRF840LCL	Vishay Silic...	0.0 $	1000	MOSFET N-CH 500V 8A TO-26...
IRF8915TR	Infineon Tec...	0.0 $	1000	MOSFET 2N-CH 20V 8.9A 8-S...
IRF8113TR	Infineon Tec...	--	1000	MOSFET N-CH 30V 17.2A 8-S...
IRF8736TRPBF	Infineon Tec...	--	234	MOSFET N-CH 30V 18A 8-SOI...
IRF840ASTRR	Vishay Silic...	0.0 $	1000	MOSFET N-CH 500V 8A D2PAK...
IRF820STRLPBF	Vishay Silic...	--	1000	MOSFET N-CH 500V 2.5A D2P...
IRF8915TRPBF	Infineon Tec...	--	4000	MOSFET 2N-CH 20V 8.9A 8-S...
IRF840APBF	Vishay Silic...	--	5580	MOSFET N-CH 500V 8A TO-22...
IRF8734PBF	Infineon Tec...	0.0 $	1000	MOSFET N-CH 30V 21A 8-SOI...
IRF840STRRPBF	Vishay Silic...	--	1000	MOSFET N-CH 500V 8A D2PAK...