Allicdata Part #: | IRF8306MTRPBF-ND |
Manufacturer Part#: |
IRF8306MTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 23A DIRECTFET |
More Detail: | N-Channel 30V 23A (Ta), 140A (Tc) 2.1W (Ta), 75W (... |
DataSheet: | IRF8306MTRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.35V @ 100µA |
Package / Case: | DirectFET™ Isometric MX |
Supplier Device Package: | DIRECTFET™ MX |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 75W (Tc) |
FET Feature: | Schottky Diode (Body) |
Input Capacitance (Ciss) (Max) @ Vds: | 4110pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 2.5 mOhm @ 23A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Ta), 140A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRF8306MTRPBF is an MOSFET (metal oxide-semiconductor field-effect transistor) that serves a range of applications in the electrical world. It helps to control the flow of current in electronic devices in a precise and efficient manner. The transistor itself looks like a small metal box and it operates in three different modes - depletion mode, enhancement mode, and linear mode. The specific mode of operation depends on the electrical characteristics of the individual device.
The IRF8306MTRPBF is a single-pole, double-throw (SPDT) field-effect transistor. This type of transistor is used to control the current flow between two terminals by applying a voltage across the gate. The device can be used as an electronic switch or an amplifier, enabling control of current through semiconductor devices.
As a transistor, the IRF8306MTRPBF has two major components – the gate and the source. When a voltage is applied to the gate, it changes the conductivity of the source and thus controls the current. The gate and source are connected via a thin layer of metal oxide which acts as a sort of insulator, ensuring that current doesn’t leak from one component to the other.
The IRF8306MTRPBF is a P-channel, depletion mode transistor and operates in both SPST and SPDT modes. When the gate voltage is positive, a depletion channel is induced between the gate and the source, thereby allowing current to flow from source to drain. When the gate voltage is negative, the depletion channel collapses and current stops flowing.
The IRF8306MTRPBF is not only used as an electronic switch or amplifier, but also in voltage regulation circuits. In these circuits, the field-effect transistor is used to sense the current levels and regulate the output voltage accordingly. This ensures that the desired voltage is maintained and that the device remains protected from overvoltage or high current conditions.
In addition, the IRF8306MTRPBF is commonly used in integrated circuits (ICs) where current is accurately regulated in analog, digital, and mixed signal applications. These transistors can also be used in power and logic device designs, as well as for driver circuits. This type of transistor is often used for high-speed switching applications, such as computers, audio systems, and other equipment.
The IRF8306MTRPBF is a highly dependable, high-quality device that is designed for use in a variety of applications. It is important, however, to ensure that the device is appropriately selected for the specific application, as performance and safety may be compromised if the wrong device is used. Furthermore, users should consider any safety protocol, regulations, and requirements prior to handling and operating the device.
The specific data is subject to PDF, and the above content is for reference
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