Allicdata Part #: | IRF840LCSPBF-ND |
Manufacturer Part#: |
IRF840LCSPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 500V 8A D2PAK |
More Detail: | N-Channel 500V 8A (Tc) 3.1W (Ta), 125W (Tc) Surfac... |
DataSheet: | IRF840LCSPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 850 mOhm @ 4.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRF840LCSPBF Application Field and Working Principle
IRF840LCSPBF is a high power switching device manufactured by N-Channel MOSFET designed to be used in applications requiring low on-state resistance, low capacitance, and is specially tailored for multi-region high efficiency power converters.
The IRF840LCSPBF offersbest-in-class performance with its advanced low RDS(on) and low Coss characteristics. It is suitable for highly efficient chargers and adapters, as well as high efficiency automotive chargers, converters and inverters.
Application Field
The IRF840LCSPBF is best suited for use in applications such as switching power supplies, DC-DC converters, DC-AC inverters, and load switching applications.
In high-efficiency applications, it can provide a reliable, cost-effective solution as it has an excellent current capacity, resulting in low conduction losses, and higher overall system efficiency.The IRF840LCSPBF also provides high ESD protection, making it suitable for high reliability applications.
It is also compatible with the most advanced Gate Driver and Thermal technologies, enabling reliable and robust operation over the full range of Performance operating temperature.
Working Principle
The IRF840LCSPBF is a N-Channel MOSFET that allows a very high level of current to pass through with low on-state resistance. It is operated by applying a voltage on the Gate terminal, which is also referred to as the control terminal. When a voltage is applied at the Gate, it attracts electrons from the channel region, generating a current flow path between the Source and the Drain. The conduction path can be varied by altering the voltage applied to the Gate.
The Gate terminal is isolated from the Source and the Drain by an insulated gate dielectric, a tiny layer of capacitive material that holds the Gate voltage. When a voltage is applied to the Gate, it polarizes the gate dielectric, connecting the Gate to the Source and the Drain, thus allowing current flow.
The IRF840LCSPBF features a very low on-state resistance, which reduces conduction losses and improves overall system efficiency.
The IRF840LCSPBF also boasts an exceptionally high current capacity, which makes it ideal for switching power supplies, DC-DC converters, and DC-AC inverters in high-efficiency applications.
In addition, the IRF840LCSPBF offers high ESD protection, making it suitable for high-reliability applications. The device also features advanced Gate and Thermal technologies, which makes it reliable and robust over the full range of Performance operating temperatures.
In summary, the IRF840LCSPBF is a high power switching device tailored for high efficiency applications requiring low RDS(on) and low Coss characteristics. It is suitable for highly efficient chargers and adapters, as well as high efficiency automotive chargers, converters and inverters.
The specific data is subject to PDF, and the above content is for reference
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