IRF820STRRPBF Allicdata Electronics
Allicdata Part #:

IRF820STRRPBF-ND

Manufacturer Part#:

IRF820STRRPBF

Price: $ 0.76
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 500V 2.5A D2PAK
More Detail: N-Channel 500V 2.5A (Tc) 3.1W (Ta), 50W (Tc) Surfa...
DataSheet: IRF820STRRPBF datasheetIRF820STRRPBF Datasheet/PDF
Quantity: 1000
800 +: $ 0.68569
Stock 1000Can Ship Immediately
$ 0.76
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRF820STRRPBF is a high-power field effect transistor (FET) integrated circuit. This circuit is mainly used in applications such as automotive and industrial applications, power factor correction (PFC) and power supplies. It is designed to provide a high rate of performance and reliability. It is built using an advanced 0.25 micron DMOSFET technology.

This device features an integrated Schottky diode with a current rating of 2 amps. This diode is designed to provide voltage and current protection during high-current and high-voltage applications. The IRF820STRRPBF also contains an integrated gate terminal for use in devices that require gate control. The gate terminal is designed with a low-capacitance structure to ensure high-frequency operation.

The IRF820STRRPBF is based on a high-performance single N-channel enhancement mode insulated-gate field-effect technology. This technology utilizes a source-gate structure which allows for very low on-resistance. This low-on resistance allows for high-current switching and higher power efficiency levels. It is also designed with a low threshold voltage, allowing for low power consumption and high switching speeds.

This device utilizes a body-bias structure in order to provide superior dynamic performance. This structure helps to reduce switching losses during switching and provides an improved package-to-temperature coefficient. The device is also designed with a wide range of operating temperatures, making it suitable for use in a variety of environmental conditions.

The IRF820STRRPBF works by combining a MOSFET with a gate voltage across the gate-drain junction. When a gate voltage is applied, it changes the threshold voltage across the gate-source junction. This change in voltage changes the on-resistance across the device, allowing for improved performance. The device is then able to switch between draining and sourcing current, allowing for power transfer.

The IRF820STRRPBF is highly reliable and has been used in many automotive and industrial applications. It is an ideal choice for power factor correction (PFC) and power supplies, due to its high-performance, low-on resistance and low threshold voltage. It is also suitable for use in applications such as lighting, motor control, and audio amplifiers.

The specific data is subject to PDF, and the above content is for reference

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