IRF8915TR

Series:	HEXFET®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	8.9A
Rds On (Max) @ Id, Vgs:	18.3 mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	7.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	540pF @ 10V
Power - Max:	2W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

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The IRF8915TR is a dual MOSFET array designed for general purpose power and signal switching applications. This dual MOSFET array is designed to provide high performance, lowcost, low on-resistance, and low power consumption. The IRF8915TR can be used for a variety of high-speed, high-frequency, and low-power applications such as power switching, signal switching, protection circuits, low-noise and low-power amplifiers, and DC/DC converters.The IRF8915TR has two N-channel MOSFETS with built-in body diodes which provides an advantage over using two separate devices. The devices have a low on-resistance and high-speed switching capability which enable them to be used in a wide variety of applications. The built-in body diode between the drain and source terminals of the MOSFETs prevents the reverse EMF generated during switching operations which increases reliability and improves the performance of the circuit.The IRF8915TR is available in an 8-lead DIP package and a 14-terminal SOIC package. The DIP package is designed for use in either horizontal or vertical positions and can be surface mounted or through-hole mounted. The SOIC package is designed for surface mounting and is available in either a surface mount or through-hole configuration.The IRF8915TR has a low total gate charge which provides a low power consumption level. This features make the device suitable for battery-powered, mobile, and portable applications. The device also has a high-noise immunity level which ensures a reliable operation in noisy environments.The IRF8915TR also has a high-speed switching capability which makes it suitable for high-speed applications. The device can operate up to a frequency of 40 MHz and provides a high-frequency switching capability with excellent switching speed and performance.The IRF8915TR is also compatible with TTL and CMOS logic gates. This feature allows the device to be used with a range of digital devices including microcontrollers, FPGAs, and DSPs.The working principle of the IRF8915TR is based on MOSFET Technology. MOSFET stands for Metal Oxide Semiconductor Field-Effect Transistors and is a type of transistor that is used in many different applications. The MOSFET is made up of two terminals, the drain and the source, and two gate terminals, the gate and the control gate.The MOSFET works by controlling the resistance between the two terminals by changing the amount of voltage applied to the gate terminal. When there is a high voltage applied to the gate terminal, the resistance between the two terminals decreases and the current flow increases. When the voltage is reduced, the resistance increases and the current decreases.The IRF8915TR works by using the MOSFET technology described above. Two MOSFETS are joined together in the package so that their source and drain terminals are connected to separate signals. The two MOSFETS are then driven by an external voltage applied to the gate terminals. The device is designed to have a low on-resistance which is achieved by forming a thin oxide layer between the oxide semiconductor and the source and drain terminals of the device. The oxide layer is formed by applying a voltage to the oxide electrode and as a result, the oxide layer changes from an insulator to a conductor. This results in a decrease in the on-resistance and an increase in the speed of the device.The IRF8915TR is an ideal device for power and signal switching applications. The device has a fast switching speed, a low on-resistance and a high-noise immunity level. The device also has compatibility with TTL and CMOS logic gates allowing it to be used with a variety of digital devices. The built-in body diodes also provide protection against reverse EMF generated during switching operations and help to improve reliability. All these features combine to make the IRF8915TR a highly reliable and efficient device suitable for a wide range of applications.

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