IRF820APBF

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	340pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	3 Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	2.5A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction Transistors are a key part of any Electrical and Electronic circuit. They are used to amplify signals, provide current and voltage regulation, protection, and interface to other circuits. There are many types of transistors; each of them having its own particular application field and working principle. The IRF820APBF is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is used for switching and power conversion applications. This article will discuss the application field and working principle of this device. Body IRF820APBF is a high-speed N-channel MOSFET that is used for high-speed power conversion in a variety of applications. The device can be used for switching applications, including automotive, industrial, and consumer applications. The device is also used in power conversion applications such as DC-DC converters, DC-AC inverters, and power factor correction (PFC) systems. The device is also used for protection circuits in industrial and consumer applications. This device is constructed with a special "self-aligning" process which allows for extremely low on-resistance and low gate-charge. This allows the device to switch quickly, reducing power losses and improving efficiency. Working Principle The basic principles of MOSFETs are based on the principle of mobility modulation. By selectively changing the electrical charges on the N-Channel and P-Channel of the MOSFET, the device can be switched on and off. When the gate voltage exceeds the threshold voltage, the device is turned on and current begins to flow. The drain-source voltage controls the current flow through the device. This is known as the "channel effect". When the drain-source voltage is low, the current flow is blocked. The gate-source voltage controls the amount of current flowing through the channel. This is known as the "gate effect". The gate voltage is always held below the threshold voltage of the device in order to keep the device off. Conclusion The IRF820APBF is a high-speed N-Channel MOSFET that is used for high-speed power conversion in a variety of applications. It is constructed with a special "self-aligning" process which allows for extremely low on-resistance and low gate-charge. This allows the device to switch quickly and efficiently, reducing power losses. The device is based on the principle of mobility modulation and can be switched on and off by selectively changing the charges on its N-Channel and P-Channel. It is used for switching applications and power conversion applications such as DC-DC converters and DC-AC inverters. It is also used in protection circuits in industrial and consumer applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description