Allicdata Part #: | IRF840LCL-ND |
Manufacturer Part#: |
IRF840LCL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 500V 8A TO-262 |
More Detail: | N-Channel 500V 8A (Tc) 3.1W (Ta), 125W (Tc) Throug... |
DataSheet: | IRF840LCL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 850 mOhm @ 4.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRF840LCL is a single n-channel enhanced Transistors - FET (field effect transistors) MOSFET, which has been designed to handle current upto 8 Amps and voltage upto 100V. It has low on-state resistance and fast switching speed with increased efficiency. This makes it ideal for the design of power conversion, motor control and other high-current applications.
These features allow the device to provide significant advantages in power efficiency, accuracy, and reliability over traditional semiconductor discrete devices or analog circuits. This Transistor FET MOSFET can also provide power saving and cost effective solutions in many automotive applications, consumer electronics, and renewable energy products.
IRF840LCL is designed to operate with a single supply which can range from 6V to 100V. It has a low on-state resistance of 45 mohms for efficient power conversion. It also has a fast switching speed as low as 10ns for high frequency applications.
This Transistor FET MOSFET also has a wide temperature range to operate from -55°C up to 175°C. This makes it ideal for applications involving high temperature environments. Its high junction temperature of 175°C and storage temperature of 200°C allow it to be used in high reliability applications.
In many applications using the IRF840LCL, its great current handling capabilities and low on-state resistance allow it to provide improved power conversion efficiency and controllability when compared to other Transistor FET technologies. Furthermore, its fast switching speed and wide operating temperature range make it suitable for many power applications, such as motor control, power conversion and other high current applications.
At the core of the IRF840LCL is its unique working principle, which makes use of the phenomenon of gate-source voltage to control the flow of current. When the gate-source voltage is applied to the Transistor FET MOSFET\'s gate, the electrons in the channel start to move from the source region to the drain region. This movement of electrons is what drives current through the device. The more gate-source voltage applied, the more current that can flow.
The IRF840LCL can also be used in applications where voltage is used to control current, such as in regulated power supplies or motor control applications. In these cases, the device can be used to provide a regulated output voltage by adjusting the gate-source voltage and controlling the flow of current in the device.
The IRF840LCL is a great single-channel FET MOSFET device capable of providing excellent power conversion, control, and reliability. With its low on-state resistance, fast switching speed, and wide temperature range, it is an ideal choice for many applications requiring power conversion, motor control, or other high current applications.
The specific data is subject to PDF, and the above content is for reference
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