IRF840STRRPBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRF840STRRPBF is a medium to high power complementary MOSFET device designed to replace more traditional bipolar transistors in applicable applications. The device is equipped to handle medium power applications such as power tools and garden equipment. As an enhancement-mode power MOSFET, the IRF840STRRPBF has an operating temperature range of -55°C to 175°C.

The IRF840STRRPBF is constructed of both an n-channel and a p-channel field effect transistor (FET) housed in a single package. It is also suitable for applications that requires both N- and P-channel enhancement-mode power MOSFETs in the same circuit. This characteristic makes the IRF840STRRPBF ideal for applications such as DC-DC converters and adjustable motor speed control.

The IRF840STRRPBF operates with a maximum drain source voltage of 55V and a maximum Drain current of 11 Amps. The device’s Drain to Source On Resistance (RDSon) is 20 Ohms at 10V and 17 Ohms at 20V. The part features a P-Channel turn-on voltage of 5V, a Gate to Source leakage of 0.1 nA max at -55°C and a maximum Gate to Source voltage of 10V.

In terms of application fields, the IRF840STRRPBF is commonly found in automotive, industrial, telecommunications and medical applications. The device includes electrostatic sensitive components and is suitable for applications such as DC-DC converters, start and stop circuits, adjustable motor speed control, reverse polarity protection and circuit or system-level power management functions.

The working principle of the IRF840STRRPBF can be explained using the circuit diagram below. The Drain and Source terminals on the MOSFET will always have an electrolytic diode arrangement, whereby excess current can be safely diverted to the Source terminal. When a voltage applied to the Gate terminal surpasses the threshold voltage, the resistance between the Drain and Source terminals decreases and current flows.

Alternatively, when the Voltage applied to the Gate terminal is lower than the threshold voltage, the resistance between the Drain and Source terminals increases and no current will flow. This principle is known as enhancement mode of operation. The relationship between Gate-to-Source voltage (VGS) and Drain-to-Source current (IDS) for the IRF840STRRPBF is illustrated in the graph below.

In conclusion, the IRF840STRRPBF is a medium to high power MOSFET device with an operating temperature range of -55°C to 175°C. It is suitable for applications such as DC-DC converters, adjustable motor speed control and reverse polarity protection. The device has an n-channel and p-channel FET enclosed into a single package and is commonly used in automotive, industrial, telecommunications and medical applications. The IRF840STRRPBF operates on the principle of enhancement mode of operation whereby, when the voltage applied to the Gate terminal surpasses the threshold voltage, the resistance between the Drain and Source terminals decreases and current will flow.

The specific data is subject to PDF, and the above content is for reference