IRF8714PBF

Vgs(th) (Max) @ Id:	2.35V @ 25µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1020pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	12nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	8.7 mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	14A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tube

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IRF8714PBF is an N-Channel Power MOSFET and is a type of field-effect transistor (FET). It is a commonly used component in many types of integrated circuits and is known for its ability to generate high output currents with a low input voltage. This type of transistor is important in areas such as motors, batteries, and power supplies.The MOSFET works by using the electric field which is created between the P-type substrate and the N-type channel. When the gate voltage, which is controlled by the user, is increased, the electric field between the two layers increases and the resistance of the channel decreases. This process is often referred to as the saturation region. In the saturation region, the MOSFET shows a linear output current with respect to the voltage across the drain and is best suited for switching applications, as it is able to give a fast response.IRF8714PBF is a low-voltage N-Channel MOSFET and is designed for use as a power switch. Its maximum drain-source current is 17A and its maximum drain-source voltage is 30V. Its Gate-Source voltage range is from -20V to 20V at a Temperature of +125°C. Its Drain-Source On-Resistance (Rds-on) is typically 8.2m? and it has a gate charge of 28nC. It is available in the TO-220Enhanced Package.IRF8714PBF can be used in many areas where a power component is needed, such as DC-DC converters and motor drives. The MOSFET can be used as a switch in DC motors, battery chargers, power supplies, and in VGA systems. It can also be used in Power Amplifiers and Headphone Amplifiers. When used in DC-DC Converters, IRF8714PBF is used as a high-efficiency switch which is able to reduce the conduction losses and minimize the power dissipation. In these applications, the MOSFET is connected between two voltage sources, a high supply and a low supply, which allows the user to control the power delivery from one voltage to another.When used in motor drives, IRF8714PBF is used to control the speed and position of the motor. It is used as a switch in between the motor and the controller which allows the user to control the power delivery to the motor.In VGA systems, IRF8714PBF is used to control the power delivery to the graphics card. In this application, the MOSFET is connected between the graphics card and the power supply which allows the user to control the voltage across the graphics card.For power amplification and headphone amplification, IRF8714PBF can also be used. When used as an amplifier stage, the MOSFET is connected between the output and the power source which allows the user to regulate the bias current in the amplifier. In headphone amplification systems, the MOSFET is connected between the amplifier output and the headphone jack which allows the user to control the power delivered to the headphones.Overall, IRF8714PBF is a versatile power component which is able to take on many roles. Its low on-resistance and low gate charge make it suitable for many applications such as DC-DC converters, motor drives, VGA systems, power amplifiers, and headphone amplifiers. Its ability to generate high output currents with a low input voltage makes it an ideal choice for these applications.

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