Allicdata Part #: | IRF8113TR-ND |
Manufacturer Part#: |
IRF8113TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 17.2A 8-SOIC |
More Detail: | N-Channel 30V 17.2A (Ta) 2.5W (Ta) Surface Mount 8... |
DataSheet: | IRF8113TR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2910pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 5.6 mOhm @ 17.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17.2A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRF8113TR is one of the most common types of single-gate field effect transistors (FETs) used in electronic circuitry. The transistor\'s high performance and broad application field stem from its high drain-source breakdown voltage, low on-state resistance, and low threshold voltage. As such, the IRF8113TR\'s convenient size and easy-to-use single-gate structure has made it a popular choice in many consumer and industrial electronics.
In terms of its application field, the IRF8113TR is most often found in consumer electronics such as televisions, DVD players, and video game systems. Additionally, the IRF8113TR is often used in industrial automation systems, audio equipment, power tools, and even spacecraft projects due to its impressive performance and high breakdown voltage. Its small size also makes it suitable for use in limited space conditions.
The working principle behind the IRF8113TR is relatively straightforward. The drain, gate, and source pins must all be connected to the power supply or ground in order to initiate conduction between them. Then, when a voltage is applied to the gate pin of the transistor, the current that flows between the drain and source pins depends on the amount of voltage applied and the characteristics of the channel in between them. Therefore, the IRF8113TR is able to act as an amplifier or switch in various electronic circuits, depending on the voltage applied to the gate pin.
Due to its high on-state resistance, low gate charge, and low input capacitance, the IRF8113TR also offers a high level of efficiency. This is further aided by the transistor\'s ability to operate with higher breakdown voltage and lower gate turn-on voltage than many other FETs. Additionally, the IRF8113TR is able to withstand higher power dissipation than other FETs with similar ratings, allowing the designs of more powerful and complex devices with less risk of overloading.
Ultimately, the IRF8113TR is an important device for modern electronics. Its convenient size and broad application field, combined with impressive performance, make it a popular choice in many consumer and industrial projects. Its relative ease of use and single-gate design also allow it to provide greater levels of efficiency, making it an ideal choice for many electronics engineers and hobbyists alike.
The specific data is subject to PDF, and the above content is for reference
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