IRF8010PBF

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IRF8010PBF is a low R_DS(ON) and low Qrr mosfet that provides good price and performance balance in a “GREEN” 8x8 DFN package, making it ideal for use in portable and cost-sensitive applications. This mosfet is suitable for DC/DC converters, small motor driving applications and battery management systems.

Overview of IRF8010PBF

The IRF8010PBF is a high performance, low R_DS(ON), "green" 8x8 DFN package N-channel MOSFET designed to address a wide range of advanced high power applications. It comes with an advanced gate drain structure and an ultra-low gate charge that ensures high switching performance and a low total gate charge. It offers low R_DS(ON) with a cost effective solution to achieve high efficiency in DC/DC converters and motor control applications, providing good system reliability and cost savings.

Features of IRF8010PBF

• Max R_DS(ON) — 3.2 mohm at 4.5V
• Ultra small 8x8 DFN package
• AEC-Q101 Qualified
• Very low Qrr – 40 nC Typical
• Lead-free, RoHS Compliant

Application Field of IRF8010PBF

The IRF8010PBF is designed for use in a wide range of portable and cost-sensitive applications, making it the ideal choice for DC/DC converters, small motor driving applications, and battery management systems. Its low R_DS(ON) and low quiescent drain current (I_DQ), along with its advanced gate drain structure and high frequency operation, makes it especially suitable for high frequency DC/DC converters, DC/AC inverter applications and switching regulator applications.

The IRF8010PBF is AEC-Q101 qualified and it is pin-to-pin compatible with the popular SOT-227b that is currently used in many applications.

Working Principle of IRF8010PBF

IRF8010PBF is a low R_DS(ON) and low-Qrr n-channel metal oxide semiconductor (MOSFET) designed to address a wide range of advanced high power applications. Its advanced gate drain structure, ultra-low gate charge, and low R_DS(ON) ensures high switching performance and a low total gate charge. The device is designed to handle high voltage and current, and comes with an enhanced body diode recovery time to improve power efficiency and reduce power consumption.

The IRF8010PBF is constructed with an n-channel MOSFET connected in a 3- impedance (triode) configuration, with the source and drain terminals connected to the drain and gate respectively. When a voltage is applied to the gate, it acts as an electric field to modify the properties of the insulating layer of the semiconductor material, allowing a current to flow between the drain and source upon a further application of a voltage difference between the source and the drain. When the current flow is disrupted (e.g. when the voltage applied to the gate is removed) , the current also stops, thereby preventing continuous current consumption.

Furthermore, the high drive performance of the MOSFET allows for fast switching response and high switching capabilities, making it suitable for high-power applications. The low interface capacitance of the MOSFET ensures high-frequency stability, making it ideal for high-frequency applications.

Conclusion

IRF8010PBF is a low-R_DS(ON), low-Qrr n-channel MOSFET designed to address a wide range of advanced high power applications. It comes with an advanced gate drain structure, an ultra-low gate charge, and a low total gate charge. It is suitable for DC/DC converters, small motor driving applications, battery management systems, and other portable and cost-sensitive applications. Its working principle is based on the 3- impedance (triode) configuration in which a voltage applied to the gate modifies the properties of the insulating layer of the semiconductor material, allowing a current to flow between the drain and source, and also provides high drive performance, fast switching response, and high switching capabilities.

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