Allicdata Part #: | IRF840S-ND |
Manufacturer Part#: |
IRF840S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 500V 8A D2PAK |
More Detail: | N-Channel 500V 8A (Tc) 3.1W (Ta), 125W (Tc) Surfac... |
DataSheet: | IRF840S Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 850 mOhm @ 4.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRF840S transistors are semiconductor device commonly used in power amplifiers and motor control systems. These transistors are made up of three parts: a gate, a drain, and a source. They are manufactured by Intersil Corp. IRF840S transistors are considered to be part of a family of Power Field Effect Transistors (FET). Generally speaking these FETs allow current to be controlled through electric fields, as opposed to using a physical switch or gate. This makes them ideal for applications that require a high power handling capability in a very small area.
The IRF840S is a particular type of N-channel MOSFET transistors, which are commonly used in power applications due to their low on-state resistance, high switching speed and low gate drive requirements. This type of MOSFET transistor consists of a gate, a drain, and a source, with the gate being an insulated layer between the other two. When a voltage is applied to the gate, it creates an electric field between the source and the drain, which then allows conduction between the source and drain. This type of transistor is also known as a "metal oxide semiconductor" because the gate is composed of a metal oxide.
The IRF840S transistors have an operating range of -55°C to +150°C and can handle up to 100 volts with a drain current of up to 20 amps. The device has a relatively low on-state resistance, allowing them to switch quickly and efficiently, allowing for fast and efficient control of power. The device also has a low gate drive requirement, meaning that the voltage applied to the gate will determine the characteristics of the device.
The IRF840S transistor is available in both through-hole and surface mount packages. When used in surface mount applications, they are also known as "powerPAKs" because they provide a large amount of power in a very small package. They are also available in a variety of inverse avalanche ratings ranging from 200 V to 500 V.
The IRF840S transistors are ideal for many applications, including motor control, power management systems, power switching, and power amplifiers. They are also used in applications requiring high-speed switching of large loads, and for driving relays and small motors. They have been used in automotive, computer, industrial, and medical applications.
The main advantage of this type of transistor is its low on-state resistance, which means that it can switch quickly and efficiently, allowing for quick and efficient control of power. In addition, they have a low gate drive requirement, meaning that the voltage applied to the gate determines the characteristics of the device. Because of these features, this type of transistor is ideal for high-power applications, such as motor control, power management systems, and power amplifiers.
In conclusion, the IRF840S transistor is a power field effect transistor, which is commonly used in power amplifiers, motor control systems, and various other power switching applications. It has a low on-state resistance, allowing it to switch quickly and efficiently, and it has a low gate drive requirement allowing for quick and efficient control of power. The device is available in both through-hole and surface mount packages, and is also available in a variety of inverse avalanche ratings. It is highly compatible with many applications due to its low on-state resistance and low gate drive requirement. It is capable of handling a large amount of power in a very small package, making it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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