Allicdata Part #: | IRF8910PBF-ND |
Manufacturer Part#: |
IRF8910PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 20V 10A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 10A 2W Surface... |
DataSheet: | IRF8910PBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.55V @ 250µA |
Base Part Number: | IRF8910PBF |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 960pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 13.4 mOhm @ 10A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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IRF8910PBF is a type of Field-Effect Transistor (FET) that is designed as an array type. FETs are a type of transistor used to control and route electric signals and electrical power. They are usually considered as switches since they are able to receive electric signals in the same way a switch can open and close a circuit. While FETs are usually made of two or three elements, IRF8910PBF is made of four elements in a very compact array package.
The IRF8910PBF array is designed in such a way that it mainly acts as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). As the name suggests, a MOSFET is a transistor with a metal oxide semiconductor as its active region. It works by allowing voltage to flow through it in order to control the current flowing through it. This makes them useful for a wide range of applications, particularly those where high levels of output current and power are needed.
The major application field of IRF8910PBF is in power switching circuits. As an array package, it is able to handle higher levels of power compared to more common single MOSFET packages. In these switching applications, it can be used to turn power on and off quickly and efficiently, which makes them ideal for applications such as power converters, DC-to-DC converters, and motor controllers.
In terms of working principle, IRF8910PBF operates on the basic principle of a FET. As the name suggests, a FET works by using a voltage applied to its gate to control the flow of electrons across a channel between its drain and source. The voltage applied to the gate modulates the width of the channel, which in turn determines how much current flows.
The IRF8910PBF array package incorporates a number of additional features that make it suitable for a wide range of power switching applications. The package includes both pull-up and pull-down resistors, which can be used to control the activation and deactivation of the transistor, as well as other features such as slew-rate limiting and over-current protection.
In addition to power switching, the IRF8910PBF can also be used for other applications such as amplifier circuits, modulation circuits, and signal conditioning. With its fast switching speed and low on-resistance, it is a very useful device for signal processing applications. It can also be used in motor control applications as it is capable of providing high levels of current and power.
Overall, the IRF8910PBF array package is a highly versatile device with a wide range of uses. Its relatively compact size and low on-resistance make it suitable for a variety of power switching applications, while its additional features such as pull-up and pull-down resistors make it suitable for a wide range of other applications as well. As a result, it is an excellent choice for those looking to use a FET array in their circuits.
The specific data is subject to PDF, and the above content is for reference
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