IRFHE4250DTRPBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to IRFH4250DTRPBF

The IRFH4250DTRPBF is a high-power N-channel enhancement-mode field-effect transistor (FET) array specifically designed for applications in power management and power switching. It is manufactured using a high-performance MOSFET process that enables the device to exhibit excellent low on-resistance and fast switching performance characteristics. The device is manufactured using a package with a surface mount design that is easily integrated with other surface mount components, making it an ideal solution for new designs.

Application Fields and Working Principle of IRFH4250DTRPBF

The IRFH4250DTRPBF array is ideal for use as an ideal short-circuit and overload protection device in power management and power switching applications. It is capable of operating over a wide range of temperature ranges and in high-humidity environments. Its high-reliability makes it very suitable for use in computer and networking systems, automotive and industrial power management applications, and other demanding applications.

The IRFH4250DTRPBF contains eight N-channel MOSFETs (enhancement-mode FETs) arranged in a common-source configuration. In this configuration, the body/source terminals of each FET are connected between one another and also connected to the ground. The gate terminals control each FET’s conduction current and thus the load current. When the gate terminal is raised above the gate threshold voltage, the device becomes conductive and current flows from the source to the drain. When the gate terminal is pulled below the threshold voltage, the FET stops conducting. The threshold voltage of a FET used in the common-source configuration is determined by the body-to-source voltage of the device, which can vary over temperature.

Aside from acting as a short-circuit or overload protection device, the FET array in the IRFH4250DTRPBF can be used to drive a load, in some cases up to the breakdown voltage of the device. This feature can be used to facilitate the over-current protection of a load or supply, or to control the power or current flow in a circuit. The low on-resistance of the device enables improved efficiency and minimal power dissipation in the system.

The IRFH4250DTRPBF is also suitable for integration into digital logic applications. As the threshold voltage and body-to-source voltage of the array are fixed, and the gate can be driven with a digital signal, the array can be used to control a current or power flow in a digital manner. This makes the array suitable for use in pulse-width modulation (PWM) converters, motor speed control systems and other such applications.

Conclusion

The IRFH4250DTRPBF is a high-performance FET array that is suitable for use as a short-circuit or overload protection device as well as a switch or driver in some applications. Its high-reliability makes it ideal for use in power management and power switching, automotive, industrial and digital logic applications. It is easy to integrate with other surface mount components, making it an ideal solution for new designs.

The specific data is subject to PDF, and the above content is for reference