Allicdata Part #: | IRFH7923TRPBFCT-ND |
Manufacturer Part#: |
IRFH7923TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 15A PQFN56 |
More Detail: | N-Channel 30V 15A (Ta), 33A (Tc) 3.1W (Ta) Surface... |
DataSheet: | IRFH7923TRPBF Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Ta), 33A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 8.7 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2.35V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1095pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 3.1W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PQFN (5x6) Single Die |
Package / Case: | 8-PowerVDFN |
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IRFH7923TRPBF is a MOSFET of type P-Channel Enhancement Mode Power Field Transistor. It is designed using advanced single-diffused power MOSFET technology and, with its integrated Schottky diode, it offers low on-state resistance and gate charge, featured with very high operating currents and high power capabilities. In addition, it also provides excellent in-circuit protection and heat dissipation properties. As a result, IRFH7923TRPBF is a great choice for various applications such as power management, automotive electronics, switching mode power supplies and general purpose power switching.
The IRFH7923TRPBF features a combination of low RDS(on), high power handling capability, as well as small size. Its low and constant RDS(on) makes it suitable for high current switching applications and its low on-resistances enable the device to handle high peak current pulses. Moreover, its high drain voltage, gate to source voltage, and power rating make it suitable for a wide array of applications.
In terms of working principle, the IRFH7923TRPBF is a type of FET, or field-effect transistor, as previously mentioned. A field-effect transistor is a type of transistor that is composed of a source, a drain and a gate. The gate is insulated from the source and drain terminals and no current is flowing through it when there is no gate voltage applied. When a gate voltage is applied, this creates an electric field which controls the current flowing through the source and drain terminals. In summary, the IRFH7923TRPBF works by using an electric field to control its current.
Looking at different applications of the IRFH7923TRPBF, this device can be used in a wide range of electronics applications due to its low RDSon and high power rating. In motor drives or other motor control applications, the IRFH7923TRPBF can be used as a power switch to control the speed and direction of the motor. It can also be used in digital circuits, where the device can be used as a switch to selectively connect or disconnect power to certain components. In an audio reaction system, it can be used for a low-noise audio signal amplification. Other applications include analog and digital power management and multiple power application switching.
In conclusion, the IRFH7923TRPBF MOSFET is a great choice for power management, automotive electronics, switching mode power supplies, and general purpose power switching due to its high power handling capabilities and low on-state resistance. It works as a type of field-effect transistor, using an electric field to control its current. It is also suitable for a number of applications such as motor drives, digital circuits, audio reaction systems, analog and digital power management, and multiple power application switching.
The specific data is subject to PDF, and the above content is for reference
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