IRFH5206TRPBF Allicdata Electronics
Allicdata Part #:

IRFH5206TRPBFTR-ND

Manufacturer Part#:

IRFH5206TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 16A 8-PQFN
More Detail: N-Channel 60V 16A (Ta), 89A (Tc) 3.6W (Ta), 100W (...
DataSheet: IRFH5206TRPBF datasheetIRFH5206TRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 100µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PQFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 100W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 89A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRFH5206TRPBF is a single N-channel enhancement-mode vertical DMOS FET (V-DMOS) that is designed specifically for low voltage and low current applications. The product is especially suited to be used as a level or interface switch in the automotive, industrial, audio, and consumer application fields. IRFH5206TRPBF is typically used in environments where there is a need for low on resistance, low power consumption, and low thermal resistance due to the device's relatively high drain current rating.

The working principle of IRFH5206TRPBF is based on the physical principle of the Field Effect Transistor, and is an enhancement-mode field-effect transistor (FET), having a conductive channel between its source and drain regions, through which current can pass from source to drain when the gate and drain are at different potentials. The gate is positively-biased with respect to the source resulting in the thin N-channel conductive path being formed by holes (electron majority carriers) in the N-type semiconductor material substrate between the source and drain. The additional application of a drain bias (positive with respect to source) further increases the total charge inside the N-channel, allowing the gate voltage to be decreased significantly to further reduce the drain current path.

The IRFH5206TRPBF has many features that make it ideal in the applications previously mentioned. Its low gate charge (Qg) results in reduced power consumption, while also allowing for rapid switching times. In addition, its low on-state resistance (RDS(on)) results in smooth and stable operation, even at high current levels. It also has exceptional EMI protection due to its excellent Vgs(th) linearity, fast switching speed, and high rejection rates. Finally, its minimal gate resistance (Rg) and low gate charge (Qg) eliminates the need for external current limiting resistors and charging circuits.

IRFH5206TRPBF is suitable for automotive, audio, industrial, and consumer applications due to its high-level performance, low total power dissipation, excellent avalanche energy, and surge current capability. Its high-level performance characteristics also makes it an ideal choice for applications that require a driving current that can support an external device, such as a servo motor, in an efficient and low-power manner as well as allow a series of motors or other video device to be operated simultaneously.

IRFH5206TRPBF is a versatile device that has a wide variety of applications where high-level performance is essential. From automotive powertrain control, motor control, audio amplifier control, and industrial interface switch control, the device is able to handle the job. Its high-level performance, low total power dissipation, excellent avalanche energy, and surge current capability make it ideal for use in automotive, industrial, audio, and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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