IRFH8334TR2PBF Allicdata Electronics
Allicdata Part #:

IRFH8334TR2PBFCT-ND

Manufacturer Part#:

IRFH8334TR2PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 12A 5X6 PQFN
More Detail: N-Channel 30V 14A (Ta), 44A (Tc) 3.2W (Ta), 30W (T...
DataSheet: IRFH8334TR2PBF datasheetIRFH8334TR2PBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PQFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 9 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT) 
Description

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IRFH8334TR2PBF is a high-performance 2.5 amp N-Channel MOSFET, it is available in three different packages and can be used in balance circuits and audio amplifiers such as high-end multimedia systems and gaming rigs. This semiconductor device is a three-terminal voltage regulator, which controls the voltage via capacitive input; and therefore, the voltage output will vary depending on the input voltage.

This MOSFET has low gate charge, allowing for high frequency operation which makes it suitable for switching applications. Furthermore, its low output capacitance and drain-source resistance also allow for an increased gain in certain less-sensitive applications. The MOSFET also features a tightly matched RDS(on) of 10 mOhms, which is an impressive efficiency indicator.

The IRFH8334TR2PBF provides two useful functions—a source-drain voltage regulator and a control terminal. The source-drain voltage regulator can be used to control the voltage between the gate and the source, while the control terminal can be used to toggle the N-channel when necessary. In addition, the MOSFET also provides an incredibly low on-resistance of 0.62 ohms, making it ideal for use as a switch when it comes to high power applications.

The output capacitance of the MOSFET is also quite small, which means that it can handle high frequencies with less ringing. The low drain-source resistance also helps reduce thermal losses. All of these features make the IRFH8334TR2PBF a great choice for high speed applications.

The working principle of the IRFH8334TR2PBF is quite simple. When a voltage is applied to the gate of the MOSFET, it creates a voltage threshold which opens a conducting channel between the source and the drain. This then allows current to flow between the two. Since the channel created is a function of the gate voltage, the resistance can be easily changed by adjusting the gate voltage. As a result, the output voltage can be precisely controlled by controlling the gate voltage.

Therefore, IRFH8334TR2PBF provides a simple, efficient and highly accurate way of controlling voltage. It is an ideal choice for many different applications like high-frequency switching and audio amplifiers. Due to its low output capacitance, low drain-source resistance and highly matched RDS(on) it can be used in a number of different demanding applications such as PWM circuits, high-end audio amplifiers, and even some gaming rigs.

The specific data is subject to PDF, and the above content is for reference

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