IRFHS9301TR2PBF

Vgs(th) (Max) @ Id:	2.4V @ 25µA
Package / Case:	6-PowerVDFN
Supplier Device Package:	6-PQFN (2x2)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	580pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	13nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	37 mOhm @ 7.8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	6A (Ta), 13A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Cut Tape (CT)

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The IRFHS9301TR2PBF is a single-sided N-channel device, generally found in high voltage and high current applications. It is suitable for power bus bars, power converters, motor drives, audio amplifiers, and industrial controls. It has a low RDS(on) of 0.253 Ohms, a drain to source voltage of 500V, a drain current Id of 25A, and a gate threshold voltage of 5V.The IRFHS9301TR2PBF is a metal-oxide-semiconductor field-effect transistor (MOSFET). A MOSFET is a three-terminal combination of an insulated metal gate and a semiconductor, typically silicon. The metal gate gives the device control capabilities, allowing the transfer of electric charge from source to drain with no current flowing through the gate, thus improving efficiency and power handling. MOSFETs are used in a wide range of applications, from audio amplifiers to microprocessors.In order to understand the working principle of a MOSFET, it is helpful to look at the energy band diagrams for the transistor. When a small voltage is applied to the gate of a MOSFET, it creates a localized electric field in the region between the gate and the gate oxide, allowing electrons to flow through the channel region of the transistor. This produces holes in the layer of oxide, creating a region between the gate and the source or drain. This region is known as the inversion layer, and is responsible for the transfer of electric charge from the source to the drain.When the voltage applied to the gate is increased, the inversion layer becomes larger, resulting in an increase in current passing through it. Thus, the MOSFET operating as a voltage-controlled device, allows current to be controlled by applying a voltage to the gate. This is the principle behind the IRFHS9301TR2PBF, and the main reason why it is suitable for use in applications such as those mentioned earlier.The IRFHS9301TR2PBF is used in many applications because of its high current and voltage handling capabilities. Its high current and voltage capabilities allow it to be used in applications such as motor drives, audio amplifiers, and power converters. Its low gate threshold voltage also allows it to switch at high speeds, making it suitable for applications that require high switching frequencies.The IRFHS9301TR2PBF is also very efficient, allowing it to be used in applications that require low power consumption. It is also reliable, as the device is highly resistant to damage due to overvoltage, ESD, reverse current, and thermal or mechanical stress.The IRFHS9301TR2PBF is available in a variety of packages, allowing it to fit into a variety of designs. It is also relatively easy to construct and maintain, as the device requires minimal support circuitry.In summary, the IRFHS9301TR2PBF is a single-sided N-Channel MOSFET device with a high current and voltage handling capabilities. Its low gate threshold voltage and reliable performance make it suitable for a variety of applications, such as motor drives, audio amplifiers, and power converters. Its wide variety of package options and easy construction and maintenance make it an attractive option for designers and engineers.

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