Allicdata Part #: | IRFH7188TRPBFTR-ND |
Manufacturer Part#: |
IRFH7188TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 18A |
More Detail: | N-Channel 100V 18A (Ta), 105A (Tc) 3.8W (Ta), 132W... |
DataSheet: | IRFH7188TRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | FASTIRFET™, HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Ta), 105A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2116pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 3.8W (Ta), 132W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PQFN (5x6) |
Package / Case: | 8-PowerTDFN |
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The IRFH7188TRPBF is a single N-channel enhancement mode MOSFET transistor device with lower static and dynamic characteristics. As one of the most commonly used transistors today, the IRFH7188TRPBF offers many advantages and is thus one of the most widely used types in a vast range of applications. This article will focus on the main fields of application for the IRFH7188TRPBF and the working principle behind it.
The IRFH7188TRPBF has a wide range of applications, such as its ability to act as a low side switch in power management systems, like DC/DC converter, load switch, motor driver, and high side switch. Furthermore, it can also be used as an AC switch in industrial automation systems, personal computer power supplies, telecommunication systems and battery management systems. With its enhanced switching performance, the IRFH7188TRPBF is a highly efficient choice for a number of applications.
The IRFH7188TRPBF offers many benefits due to its favorable on-characteristics, low output resistance and rugged construction. Its structure is composed of an oxide-semiconductor field-effect transistor, which consists of a semiconductor layer as the ‘gate’ and an oxide layer which acts as a dielectric medium. The gate is used to determine the output resistance and current capacity and the oxide layer is used to enhance its voltage efficiency.
Moreover, the IRFH7188TRPBF utilizes a high-volume electron mobility design technology to minimize the gate leakage, while at the same time maintaining maximum current transfer. This is combined with a low capacitance found between the gate and drain and a low on-resistance to increase the device’s efficiency.
The IRFH7188TRPBF uses depletion-mode operation, meaning that the device turns on when there is no voltage applied to the gate, and turns off as soon as a small negative voltage is applied. This makes it ideally suited for applications such as load switching, motor control and AC/DC motor control. Additionally, the IRFH7188TRPBF has a good temperature coefficient on the input–output characteristics, which makes it an efficient choice for a large range of applications.
In conclusion, the IRFH7188TRPBF is an ideal transistor device for a wide array of applications that require an efficient, low source-resistance, low-voltage switch. Its enhanced performance characteristics make it superior to other types of transistors, and its low capacitance reduces the window of time necessary for charging and discharging the switch. This makes the IRFH7188TRPBF a perfect tool for a variety of functions within industrial, medical, aircraft and other types of commercial applications.
The specific data is subject to PDF, and the above content is for reference
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