IRFH7911TRPBF

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The IRFH7911TRPBF is an advanced technology transistor array which is used in many systems and applications. It is a lateral Double-Diffused Metal-Oxide Semiconductor Field-Effect Transistor (DMOSFET) array. It has a maximum drain-source voltage of 55V, a continuous drain current of 16A, a maximum gate source voltage of 20V and a configuration of twelve devices in N-Channel enhancement mode, each with its own gate and source terminal.

The Functionality of the IRFH7911TRPBF

The main role of the IRFH7911TRPBF is to provide high level configurability and reliability in electronic-based systems. The device is commonly used as an Electronic Switch, a DC Motor Controller, and as a High Efficiency Regulator. The array design of the IRFH7911TRPBF allows the user the flexibility to configure the circuitry exactly to their individual requirements.

Application Areas

The IRFH7911TRPBF is typically found to be used in many industrial electronic and electro-mechanical applications. It is designed to work in numerous applications such as HVAC/R Systems, Automotive Electronic Throttle, Power Supplies, DC Motors and High Efficiency Regulators. The IRFH7911TRPBF is particularly advantageous for more advanced applications as it is designed with very low on-resistance properties with both low and high temperature operation, as well as its ability to maintain linearity when operating over a wide range of temperatures.

Working Principle of the IRFH7911TRPBF

The IRFH7911TRPBF works according to the most common field-effect transistor (FET) principle. The N-Channel MOSFET transistors within the array are turned ‘on’ via the gate voltage and start to conduct current between the source and the drain. The gate voltage applied plays a pivotal role in the current conduction between the source and drain. By applying a higher gate voltage, this impedes the current conduction and the device is turned ‘off’.

The salient feature of the IRFH7911TRPBF is the high-level configurability and efficiency it offers. The device consumes very low quiescent current to minimize overall system power consumption. This delivers more reliable performance and higher efficiency. Additionally, the device offers a low on-resistance of 0.18 Ohms and a low gate charge (Qg) of 12nC.

Benefits of the IRFH7911TRPBF

The main benefits of the IRFH7911TRPBF are its increased efficiency, configurability, and its low quiescent power consumption. The device can also operate over a wide temperature range and can feature a low gate charge. This low gate charge results in an increased switching frequency and increased speed. Additionally, the device is designed in an array format providing flexibility for custom applications and designs.

As the IRFH7911TRPBF is designed with low gate charge properties and low on-resistance properties there are many advantages to using this device. The device is able to provide good performance with its minimal power consumption and it can also feature a fast switching frequency for a wide range of temperature conditions. Additionally, the device is designed using a field-effect transistor principle allowing its gate voltage to control its current conduction accurately.

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