| Allicdata Part #: | IRFH5020TRPBFTR-ND |
| Manufacturer Part#: |
IRFH5020TRPBF |
| Price: | $ 0.69 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 200V 5.1A 8PQFN |
| More Detail: | N-Channel 200V 5.1A (Ta) 3.6W (Ta), 8.3W (Tc) Surf... |
| DataSheet: |  IRFH5020TRPBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.69000 |
| 10 +: | $ 0.66930 |
| 100 +: | $ 0.65550 |
| 1000 +: | $ 0.64170 |
| 10000 +: | $ 0.62100 |
| Vgs(th) (Max) @ Id: | 5V @ 150µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-PQFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.6W (Ta), 8.3W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2290pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 54nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 55 mOhm @ 7.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5.1A (Ta) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The IRFH5020TRPFB Field Effect Transistor (FET) is ideal in applications that require linear operation and low power loss. It is well known for its high breakdown voltage and has a good thermal and electrical stability. The IRFH5020TRPFB is particularly suitable for use in high frequency switching applications as it has very low gate capacitance. Apart from this, it also has good switching characteristics.
The working principle of the IrFH5020TRPFB FET is fairly straightforward. The gate terminal is operated with a voltage source, and the source and drain are operated with separate voltages. When the gate voltage is below the threshold voltage, the voltage applied to the source keeps the channel open and the transistor\'s drain-source is pinched off. When the gate voltage is above the threshold, an electric field is generated between the drain and source which can support a higher current. This allows a higher current to flow from the source to the drain, increasing the power loss and allowing the FET to switch more quickly.
The IRFH5020TRPFB FET is widely used in a variety of applications such as power switches, power amplifiers, motor controllers, and numerous other fields as it can handle currents of over 1A. Moreover, with its low gate capacitance, the IRFH5020TRPFB FET is optimal for high-speed switching applications such as frequency synthesizers, digital-to-analog converters, and high-speed communication systems.
In conclusion, the IRFH5020TRPFB FET transistor is a wide bandgap, low conductivity transistor that is primarily used in high frequency switching and power amplifying applications. It has very low gate capacitance, allowing it to switch faster than other FETs and making it suitable for use in high-speed circuits. Its working principle is based on an electric field that is generated between the source and drain by applying a positive voltage to the gate which, when exceeded the threshold voltage, allows more current to flow from the source to the drain. This increases the power loss and allows the FET to switch more quickly.
The specific data is subject to PDF, and the above content is for reference
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