Allicdata Part #: | IRFH6200TRPBFTR-ND |
Manufacturer Part#: |
IRFH6200TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 45A 8-PQFN |
More Detail: | N-Channel 20V 49A (Ta), 100A (Tc) 3.6W (Ta), 156W ... |
DataSheet: | IRFH6200TRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.1V @ 150µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PQFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 156W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10890pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 230nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 0.95 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 49A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRFH6200TRPBF is a type of MOSFET which stands for “Metal Oxide Semiconductor Field Effect Transistor” It is a voltage-controlled device used as an efficient switch in many electronic circuits. MOSFETs are widely used in power control applications because they are capable of switching high-currents and operating at high-frequencies. The IRFH6200TRPBF is a type of n-channel enhancement mode MOSFET. An “n-channel” MOSFET has a “n-type” conductive channel, while an “enhancement” mode device operates with a gate voltage of 0 volts. The IRFH6200TRPBF is a single device and at only 6mm x 6mm, it is considered to be a small device, with a maximum current rating of 4.5A and a maximum drain-source voltage of 600V.
The IRFH6200TRPBF can be used in a variety of applications and is suitable for use in switching, amplifying and protecting current in numerous high-power applications. This type of MOSFET can be used in power supplies and inverters, motor control, voltage regulation systems and even in high-end audio and communication systems. Due to its small size, it is also particularly suitable for applications where space is limited, such as in telecom and computer systems.
The fundamental working principles of the IRFH6200TRPBF MOSFET are relatively simple. MOSFETs are voltage-controlled devices, meaning they are activated and shut off when an electrical charge is applied to the gate of the MOSFET. When a positive voltage is applied to the gate, the channel between source and drain is “opened”, allowing current to flow through. When the source and gate voltages are equal to each other, the channel is “closed,” no current will flow through. This is the basic principle behind the operation of the IRFH6200TRPBF MOSFET.
Aside from its excellent current-handling capabilities, the IRFH6200TRPBF is also an extremely reliable device. It has a low on-state resistance and a high load capacity, which means it is able to handle large loads without sacrificing performance. It also has a high frequency switching capability and is capable of operating at high speeds, meaning it can be used in high-speed computer and communications systems.
The IRFH6200TRPBF is a great choice for many high-power applications due to its small size, low-on state resistance and high load capacity. It can be easily mounted onto a circuit board and it offers excellent reliability and performance. It is ideal for applications that need high-speed switching and current handling, while also offering good thermal performance and low power consumption. With its impressive features and wide range of application fields, the IRFH6200TRPBF is an ideal choice for many electronic systems.
The specific data is subject to PDF, and the above content is for reference
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