IRFHM8235TRPBF

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IRFHM8235TRPBF is a power MOSFET produced by International Rectifier, a division of Vishay Intertechnology. It is an enhancement mode, N-channel MOSFET with a breakdown voltage of 48 V, a gate threshold voltage of 1.9 V, an RDS(on) of 1.36 Ω and an excellent gate charge spreading of 1.2 pC. It belongs to the TO-220AB package family and is popularly used in digital and analog circuits and switch-mode power supplies. As an enhancement mode device, it can be used as an amplifier, oscillator or phase shifting circuit. This article explains the application field and working principle of the IRFHM8235TRPBF.

The IRFHM8235TRPBF power MOSFET is capable of producing high speed switching, actuating and controlling functions. It is suitable for amplifier, relay and motor control applications, power supply and lighting regulations, motor control and HVAC, and heavy duty motor control applications. Its 48 V breakdown voltage enables it to stand up to higher electric field and current levels while itsTO-220AB package allows it to be easily fitted in the circuit. The 1.2 pC gate charge spreading ensures rapid switching speeds.

In terms of its application fields, the IRFHM8235TRPBF MOSFET is considered to be one of the best options for use in high speed switching, actuating, and controlling applications. It is suitable for electric field, current level, power supply, lighting regulations, motor control, HVAC, heavy motor control, as well as amplifier, relay, and motor control circuit. Its wide application fields make it an ideal choice for many circuit requirements.

As for the working principle of the IRFHM8235TRPBF, it is related to the P-channel MOSFET that is employed to create the electric field between source and drain. The electric field enables the current flow in the transistor. At the same time, the gate voltage is applied to the gate terminal to control the conductance of the transistor and thus the current flow. When the gate voltage is applied, electrons of the substrate gets depleted and causes a negative charge near the drain. This attracts positive charge to that region and the source voltage can be applied to draw the current. When the gate voltage is below the threshold voltage, the electric field between source and drain is completely closed and this makes the IRFHM8235TRPBF MOSFET off.

In conclusion, IRFHM8235TRPBF is an N-channel MOSFET produced by International Rectifier. It has an excellent gate charge spreading and a breakdown voltage of 48 V, which makes it suitable for a wide range of applications like high speed switching, actuating, and controlling. Its working principle is based on the P-channel MOSFET, in which the electric field between source and drain is created and depending on the gate voltage, current flow can be regulated.

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