IRFH3702TRPBF

Vgs(th) (Max) @ Id:	2.35V @ 25µA
Package / Case:	8-PowerVDFN
Supplier Device Package:	8-PQFN (3x3)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.8W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1510pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	14nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	7.1 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	16A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IRFH3702TRPBF Application Field and Working Principle

The IRFH3702TRPBF is a single N-Channel enhanced mode Field Effect Transistor (FET) designed for the use in digital and analog circuits. It offers excellent performance, reliability and quality for a wide variety of applications. The IRFH3702TRPBF is a single, low-power, low-on-capacitance NMOS device, ideal for use in battery powered and/or low-power applications. It features an enhanced P-channel JFET architecture with an on-resistance of 12.5 ohms.

Application Fields

IRFH3702TRPBF is useful in many different applications due to its low on-capacitance (less than 20pF), low power consumption and low on-resistance. It is the optimal choice for applications such as:

• Power Management: The IRFH3702TRPBF can be used for power management in consumer, automotive and industrial applications. It is commonly used as a switches for high frequency devices where low power dissipation and high efficiency are required.
• Analog Control & Signal Conditioning: The IRFH3702TRPBF provides superior performance in analog control and signal conditioning. It is well suited for circuit designs that require a small footprint, low power consumption, and low power dissipation.
• Low Voltage & High Frequency Applications: The IRFH3702TRPBF is designed to perform in applications that require low voltage and high frequencies. It is suitable for both low and high speed operations, such as in base stations and mobile applications.
• Telecommunications & Networking: The IRFH3702TRPBF is used in various types of telecommunications and networking applications. It is suitable for switching applications that require low on-resistance and high gain. In addition, it provides excellent noise rejection and power supply rejection for better performance and reliability.

Working Principle

Field Effect Transistors (FETs) are a type of transistor which uses an electric field to control the flow of current between its terminals. The IRFH3702TRPBF is a single N-Channel E-mode FET, meaning it controls the amount of current that flows through it by creating an electric field under a gate. The field is created by applying charge to the gate while the drain and source pins remain at a constant potential. When the gate is positively charged, the electric field created causes the electrons in the channel to be attracted towards the gate, thereby increasing the conductivity in the channel. The conductivity can be further increased by increasing the electric field. Conversely, when the gate is negatively charged, the electric field created causes the electrons in the channel to be repelled, thereby decreasing the conductivity in the channel.The IRFH3702TRPBF is an ideal FET for switching applications as it has an on-resistance of 12.5 ohms and low gate capacitance. It is also able to provide superior noise and power supply rejection. This enables the transistor to provide reliable and efficient performance in applications that require high gain, low power consumption and high speed operations.

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