IRFR014 Allicdata Electronics
Allicdata Part #:

IRFR014-ND

Manufacturer Part#:

IRFR014

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 7.7A DPAK
More Detail: N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surfac...
DataSheet: IRFR014 datasheetIRFR014 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRF014, otherwise known as a field effect transistor (FET), is a type of single MOSFET device. They are transistor switching devices that control the flow of electric current using the minority charge carriers. This type of FET is popularly used for audio amplification, switching applications and voltage regulation.

The key part of IRF014 is its highly insulated gate. This gate is a conductive channel, which is surrounded by a dielectric material. When electric voltage is applied across the gate terminal, a relatively small voltage difference is generated between the source and drain terminals. This voltage difference causes a proportional current flow between source and drain terminals which changes depending on the electric field between the gate terminal and the majority charge carriers. Therefore, the name “Field Effect”.

As far as working principles go, IRF014 operates similarly to any other FET. The gate-source voltage (VGS) controls the majority charge carriers. This control allows the FET to act as a switch when a positive gate-source voltage is applied. The increased charge carriers cause a decrease in the resistivity of the channel, allowing electrons to flow freely between source and drain terminals. Conversely, when the voltage on the gate-source is made negative, the majority charge carriers are repelled and the resistivity of the channel increases. This restricts the flow of electrons and turns the switch to an OFF mode.

In terms of applications, IRF014 FETs are used in a variety of different electronics. Audio applications make use of these FETs to amplify and buffer sound signals, as their low drain-source capacitance allows for minimal sound degradation even when operating at high frequencies. Additionally, their low distortion and high input impedance make them ideal for audio modulation and compression applications. These FETs are also commonly used for DC-DC converters, as their voltage thresholds allow them to efficiently store and regulate large amounts of power.

IRF014 FETs are also valued for their high switching speeds, making them extremely useful for sensor circuitry, drive circuits and power switching applications. Furthermore, their compact size makes them ideal for large-scale integration into small circuit layouts; this makes them perfect for modern applications such as mobile phones or computers.

In conclusion, IRF014 FETs are extremely useful single-MOSFET devices, suitable for a wide variety of applications. Through their insulated gate terminal, IRF014 FETs can be switched on and off quickly and efficiently in order to facilitate a variety of voltage regulation, switching and amplification tasks. Furthermore, their small size, high switching speeds and low distortion make them invaluable in modern day technology.

The specific data is subject to PDF, and the above content is for reference

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