IRFR3910TRLPBF Allicdata Electronics
Allicdata Part #:

IRFR3910TRLPBFTR-ND

Manufacturer Part#:

IRFR3910TRLPBF

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 16A DPAK
More Detail: N-Channel 100V 16A (Tc) 79W (Tc) Surface Mount D-P...
DataSheet: IRFR3910TRLPBF datasheetIRFR3910TRLPBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.29000
10 +: $ 0.28130
100 +: $ 0.27550
1000 +: $ 0.26970
10000 +: $ 0.26100
Stock 1000Can Ship Immediately
$ 0.29
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 79W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 115 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRFR3910TRLPBF Field Effect Transistor (FET) is a type of electronic switch which is often used to amplify signal or switch electronic signal, and its application field is wide. The working principle of the device is based on the movement of charge carriers which include electron, hole, and ion more specifically. The most common type of FET is the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), and the IRFR3910TRLPBF is a single MOSFET with a relatively large current-handling capacity.

In terms of the application field, FETs and MOSFETs can be used in many electronic circuits. MOSFETs are widely used in electronic circuits that require both low electrical noise and complex control signals, such as audio power amplifiers, computerized process control systems, and electronic instrumentation systems. As single MOSFETs, the IRFR3910TRLPBF is suitable for applications such as motor control, power supplies, and audio amplifiers.

In terms of its working principle, FET is a voltage-controlled device based on the fact that semiconductor materials are able to conduct electricity only when a certain electrical field is applied. In other words, the FET depends on its gate voltage to control the flow of current between its source and drain. The IRFR3910TRLPBF is designed with a P-channel MOSFET, which means the gate voltage applied to the device will create an electron field to open or close the circuit.

The IRFR3910TRLPBF MOSFET contains an additional special feature, known as trace mode, which allows the current flowing through the device to be monitored with diagnostic equipment. This feature is useful for debugging and troubleshooting circuits. Another feature of this MOSFET is its low on-state resistance, which allows it to handle large currents while maintaining a low voltage drop.

To sum up, the IRFR3910TRLPBF is a single MOSFET with many desirable features, such as special trace mode, low on-state resistance, and wide application field. The working principle of the device is based on the movement of charge carriers through the gate-controlled field between its source and drain, and it is widely used for applications such as motor control, power supplies, and audio amplifiers. By understanding the working principle and the application field of the IRFR3910TRLPBF, engineers can easily select the best MOSFET for their circuit designs and applications.

The specific data is subject to PDF, and the above content is for reference

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