Allicdata Part #: | IRFR3504ZTRR-ND |
Manufacturer Part#: |
IRFR3504ZTRR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 42A DPAK |
More Detail: | N-Channel 40V 42A (Tc) 90W (Tc) Surface Mount D-Pa... |
DataSheet: | IRFR3504ZTRR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 50µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1510pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 42A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Description
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<p>The IRFR3504ZTRR is a very low threshold voltage (also known as Vth), 150V, 10A, 0.0015ohm N-Channel MOSFET. It is designed to offer fast switching to minimize power losses and have low source-drain capacitance to minimize switching losses., As the name suggests, its gate can be used to increase or decrease the flow of current through the device in order to create a control voltage across the power MOSFET.</p><p>The IRFR3504ZTRR has a high current capability and excellent temperature stability, making it well suited for low voltage applications such as DC-DC converters, switching DC-DC converters, and motor control. It is also suitable for flyback and forward converters, current mode power supplies, switch-mode power supplies and resonant converters.</p><p>The IRFR3504ZTRR is a MOSFET type device. It uses a reverse-biased gate-source junction to control the flow of electrons between the source and the drain. This is done by applying an input voltage to the gate, causing it to create an electric field, which modifies the channel conductivity and allows or restricts current flow through the device.</p><p>The great advantage of this MOSFET type of device is that it can be designed to offer higher current gain and better thermal stability than traditional bipolar transistors, making it ideal for use in applications where switching efficiency is critical.</p><p>In addition to its fast switching capabilities, the IRFR3504ZTRR also has excellent on-state conductance and output capacity, making it well suited for use in applications where high current is required.</p><p>The IRFR3504ZTRR is a versatile device and can be used in a wide range of applications such as power switches, motor control, DC-DC converters, power supplies, and high-side and low-side switches. It is also suitable for use in synchronous rectifiers and low voltage DC-DC converters.</p><p>The IRFR3504ZTRR is designed to offer fast switching times, low power losses and low source-drain capacitance. It is designed to operate at higher temperatures than traditional bipolar transistors, making it well suited for power applications where thermal management is critical.</p><p>In addition, the IRFR3504ZTRR has a low gate voltage requirement and can be used to control currents of up to 10A, making it suitable for high-current applications. Its on-resistance is also low, reducing power losses in high-current applications.</p><p>The IRFR3504ZTRR is a very versatile device and can be used in a wide range of applications. It is designed to offer fast switching, low power losses and excellent thermal stability, making it suitable for use in a variety of power applications. </p>The specific data is subject to PDF, and the above content is for reference
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