IRFR210TRPBF Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 25W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	140pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	8.2nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	1.5 Ohm @ 1.6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	2.6A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IRFR210TRPBF is a high-performance N-Channel MOSFET transistor commonly used in the switching and amplification of signals. This integrated circuit (IC) is produced by International Rectifier, a company that produces a variety of Ics, including MOSFETs and linear ICs.The IRFR210TRPBF is an N-Channel MOSFET transistor, which means it has an N-type channel and a P-type substrate. This transistor is capable of operating over a broad range of load and temperature conditions, and has a breakdown voltage of 200V.This transistor has a high transconductance, making it ideal for audio and switching applications. It has a low input capacitance, making it suitable for high-frequency switching applications. It also has a large gate charge, making it suitable for high peak current pulses. The IRFR210TRPBF transistor is used in a variety of applications. This transistor is commonly used for motor control, high voltage DC-DC conversion, AC/DC and DC/DC switching, as well as pulse width modulated (PWM) signals. It also can be used to amplify signals in radio-frequency amplifiers and in power audio amplifier applications. The working principle of the IRFR210TRPBF transistor is based on the motion of electrons, known as the Field Effect. When a voltage is applied to the gate, it establishes an electric field. This electric field causes the movement of electrons between the source and the drain. By properly controlling the voltage applied to the gate, the transistor can be made to act as an amplifier and switch.The IRFR210TRPBF is also a very reliable component, and is capable of operating over a wide temperature range. As a result, it is suitable for use in extreme temperature environments. Additionally, due to its low gate charge and high transconductance, the IRFR210TRPBF transistor is ideal for high-frequency switching and audio applications. Overall, the IRFR210TRPBF transistor is a versatile and reliable component for a variety of applications. The transistor is capable of operating in a wide range of temperatures, and its high transconductance makes it a suitable component for audio amplification and high-frequency switching applications. Additionally, the IRFR210TRPBF transistor is very reliable, making it suitable for use in extreme temperature conditions.

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