
Allicdata Part #: | IRFR110TRL-ND |
Manufacturer Part#: |
IRFR110TRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 4.3A DPAK |
More Detail: | N-Channel 100V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surfa... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 180pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 540 mOhm @ 2.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.3A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRFR110TRL is a high voltage, N-channel field-effect transistor (FET) designed for switching applications. It is optimized to provide maximum gate-source capacitance (Cgs) with minimal drain-source resistance (Rds). The device is constructed with an N-type drain-source field-effect transistor (FET), which is able to handle high voltages and temperatures, thus allowing efficient power switching applications.
The IRFR110TRL is ideal for applications such as motor control, power supply design, power conversion, and audio switching. This device features a low on-resistance (Rds) of 0.57 ohm, and maximum operating temperature of 150°C. This device is able to switch efficiently at relatively low voltages, making it suitable for many different applications. It is commonly used in power supplies, motor controllers, audio switching circuits, and other applications that require efficient power switching.
The IRFR110TRL works by controlling the flow of current between the drain and source terminals using a gate voltage. When the voltage at the gate is raised, current begins to flow from the drain to the source. This increase in current is proportional to the gate voltage. As the gate voltage is decreased, the current flowing from the drain to the source will decrease correspondingly. This is known as a depletion type MOSFET, as the increase in voltage at the gate further "depletes" the current that is available to flow between the source and drain.
Unlike other voltage-controlled transistors, the IRFR110TRL is less sensitive to voltage changes and can operate over a wide range of input and output voltages. Since the device operates independently of the input and output voltages, it can be used in applications such as motor control or power supply design. It is also able to take switching signals from logic circuits or other sources.
The IRFR110TRL offers a reliable and high performance solution for a wide range of switching applications. It is built to handle high voltages and temperatures, making it an ideal choice for various industrial and commercial applications. Its low on-resistance makes it one of the most efficient devices available. This device is an ideal choice for those applications that require efficient power switching in a reliable package.
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