IRFR1205TRLPBF Allicdata Electronics
Allicdata Part #:

IRFR1205TRLPBF-ND

Manufacturer Part#:

IRFR1205TRLPBF

Price: $ 0.40
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 44A DPAK
More Detail: N-Channel 55V 44A (Tc) 107W (Tc) Surface Mount D-P...
DataSheet: IRFR1205TRLPBF datasheetIRFR1205TRLPBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.40000
10 +: $ 0.38800
100 +: $ 0.38000
1000 +: $ 0.37200
10000 +: $ 0.36000
Stock 1000Can Ship Immediately
$ 0.4
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 107W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 27 mOhm @ 26A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRFR1205TRLPBF is a Power MOSFET that operates in a single channel, with a drain current of 25A. It was designed and developed by Infineon Technologies, a leading semiconductor company based in Germany.

A Power MOSFET is an field effect transistor that has the ability to control on/off switching with low voltage and low power. The IRFR1205TRLPBF utilizes the body-drain effect to control drain-source current flow with the gate pin. It is constructed with a silicon die embedded in a package to save space and provide superior electrical performance.

The IRFR1205TRLPBF is ideal for use in switching power supplies, solenoid and motor controls, robotic/automated control systems, and as a high-driving capability switch. It can also be used in low-side switches, such as relays, RC servos, and high frequency DC-DC converters.

The IRFR1205TRLPBF is constructed with an N-channel MOSFET that is built on an insulated substrate. This type of construction is advantageous since it offers superior switching characteristics and improved noise immunity. The N-channel construction also allows the Gate voltage to be applied directly to the source, providing a clean and fast switching performance.

The IRFR1205TRLPBF is also designed with several other features that enhance its performance. It has a low specific gate resistance, which allows for higher switching speed and better control of the Gate-Source capacitance. It also has a low input capacitance and low threshold voltage, allowing for improved gate control. Additionally, the drain-source breakdown voltage of 500V helps to improve reliability, reduce power losses and improve operating temperature range.

The working principle of the IRFR1205TRLPBF is simple. When a positive DC voltage is applied between the gate and the source, the voltage biases the circuit, allowing current to flow from the drain to the source. This current flow is controlled by the size of the gate, and is usually limited to the maximum current rating of the device. As the current flows through the device, it dissipates energy, generating heat and noise depending on the load.

To ensure that the device operates smoothly and reliably, it is important to ensure that the adjustable gate threshold voltage is adjusted correctly. Additionally, proper layout and wiring practices, such as providing adequate cooling paths and keeping leads and wires short, should be followed.

In conclusion, the IRFR1205TRLPBF is an excellent option for a wide range of applications. Its single channel design and low power switchingability make it a suitable choice for motor and solenoid control, robotic control systems, low-side switches and DC-DC converters. Additionally, its superior electrical performance, low specific gate resistance and low threshold voltage further improve its performance.

The specific data is subject to PDF, and the above content is for reference

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