IRFR3706TRR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRFR3706TRR is a single N-Ch MOSFET amplifier. It is a cost-effective solution for high peak and RDS(on) performance applications. This MOSFET is ideal for power management and DC/DC conversion. The IRFR3706TRR uses efficient N-channel MOSFET transistor technology to produce high-performance and cost-effective products for power management and DC/DC conversion. The device is a single N-Channel MOSFET with a maximum drain source voltage rating of 30V. The device has a maximum drain current rating of 13A and a maximum drain-source on-state resistance of 0.04 Ohm.

Applications

The IRFR3706TRR amplifier is suitable for use in the following applications: pulse width modulation (PWM) designs, low noise preamp and switching amplifier, battery powered portable device applications, switch mode power supplies (SMPSs), class D amplifiers, and intelligent power supply and distributed power systems.

Working Principle

The IRFR3706TRR works on the principle of FET or Field-Effect Transistor. FETs are unipolar transistor devices with a single type of charge carrier. These transistors are widely used due to their high input impedance and high current gain. FETs are three terminal devices often used in many electronics applications to control electric voltage and power.

The drain-source resistance of the IRFR3706TRR, also known as the on-resistance, is the resistance between the drain and source of the FET when voltage is applied to the gate. The lower the resistance, the better performance of the FET. The IRFR3706TRR has a maximim on-resistance of 0.04 Ohms, making it ideal for power management applications.

The IRFR3706TRR also has a maximum drain-source voltage rating of 30V. This is the maximum safe voltage that can be put across the gate and source terminals and not exceed the rated threshold voltage of the device. The gate threshold voltage of the IRFR3706TRR is 1V which is the minimum voltage that must be applied to the gate before conduction begins.

The IRFR3706TRR amplifier is also capable of handling high peak currents and is designed for low noise preamp and switching amplifier applications. It is also capable of driving up to 13A of peak current and is ideal for battery-powered portable devices such as cell phones and PDAs.

In conclusion, the IRFR3706TRR is a single N-Channel MOSFET amplifier that is capable of high peak current and low noise preamp. It is a great choice for power management and DC/DC conversion applications due to its low drain-source on-state resistance and maximum drain-source voltage rating.

The specific data is subject to PDF, and the above content is for reference