IRFR3303TRLPBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	57W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	750pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	29nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	31 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	33A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The IRFR3303TRLPBF is a Power MOSFET, which belongs to a type of field-effect transistor that uses metal-oxide-semiconductor (MOS) technology to regulate and control current between the source and the drain. This particular MOSFET is N-channel enhancement mode and is specifically designed to provide robust, efficient, and high performance with low on-resistance. The IRFR3303TRLPBF is suitable for a wide range of applications including switching, power management, and amplification.The IRFR3303TRLPBF has features that make it particularly attractive for power management applications. The low on-resistance of the device ensures that it is able to provide efficient power conversion, reducing power loss. Additionally, the device has a very low threshold voltage, allowing it to be used in a wide range of applications. The device also has low leakage currents, which provide stable operation when switching loads on and off. The active drain is able to guarantee fast switching frequency.The IRFR3303TRLPBF has a typical on-resistance of 3.3 ohms and a drain-source breakdown voltage of 30V. This makes it suitable for a wide range of applications and for designs requiring a low on-resistance. The device is also able to handle a maximum drain current of 375mA, and a maximum junction temperature of 150°C, making it suitable for a wide range of temperatures and power loads.The IRFR3303TRLPBF is based on the basic working principle of the N-Channel Power MOSFET. The MOSFET is able to regulate current between the source and the drain by controlling the electrical field between the source and the drain. The gate of the MOSFET works to control the electrical field between the source and the drain. When the gate acts as an insulator, it is in the off position and the MOSFET is inversely biased. When the gate is used as an electrically conductive material, it is in the on position and the MOSFET is forward biased. In either case, the current is able to flow between the source and the drain.The IRFR3303TRLPBF is widely used in a wide range of applications owing to its excellent capability for power management and its efficient low on-resistance. The device is widely used in the automotive, communications, industrial, and consumer electronics industries.In the automotive industry, the IRFR3303TRLPBF is used to provide efficient conversion of energy between the power source and the load, allowing for efficient power management, power protection, and control. It is also used to regulate current in engine management systems and other automotive electronics applications.In the communications industry, the IRFR3303TRLPBF is used in radio frequency (RF) power amplifiers and RF signal control systems. The device is able to provide efficient power conversion for radio signals and is used in both analog and digital systems.In the industrial sector, the IRFR3303TRLPBF is used in power supplies, motor drives, and motor control systems. It is also used in industrial automation systems and robotics.Finally, the IRFR3303TRLPBF is widely used in consumer electronics, such as audio amplifiers, audio signal processors, and smart home systems. It is also used in LED lighting systems and solar panel controllers.In conclusion, the IRFR3303TRLPBF is a Power MOSFET that is used in a wide range of applications. Its low on-resistance, low threshold voltage, and low leakage current make it particularly attractive for power management applications. The device is used in the automotive, communications, industrial, and consumer electronics industries. Additionally, the device is able to provide efficient power conversion, allowing for efficient power management and protection.

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