Allicdata Part #: | IRFR3704TRRPBF-ND |
Manufacturer Part#: |
IRFR3704TRRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 75A DPAK |
More Detail: | N-Channel 20V 75A (Tc) 90W (Tc) Surface Mount D-Pa... |
DataSheet: | IRFR3704TRRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1996pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRFR3704TRRPBF is from Infineon Technologies\' low-voltage advanced MOSFET product range. It is a single-finger MOSFET (metal oxide silicon field effect transistor) that provides a threshold voltage of 4 volts. The IRFR3704TRRPBF is a general purpose FET (field effect transistor) that can be used in a wide range of applications, such as audio amplifiers, low frequency switching applications, and battery powered circuits. It is also used in high power switching circuits, with its maximum drain-source voltage of 100 Volts and maximum drain current of 7A.
A MOSFET is a three-terminal device in which the current is controlled by varying the voltage applied to the control terminal, also known as the gate. The IRFR3704TRRPBF has an N-channel type construction and is designed for low voltage operation, so the gate voltage required for operation is typically lower than other FETs. The device features low on-resistance and low gate-to-source capacitance, making it ideal for low frequency switching applications. In addition, its low on-resistance and low gate-to-source capacitance also mean that it experiences minimal dynamic losses when switching.
In terms of features, the IRFR3704TRRPBF provides a low operating voltage, low on-resistance, low gate to source capacitance and low thermal resistance. It also has a relatively low gate attack voltage and a high dV/dt rating. In addition, it provides good current handling capability due to its vertical P-MOS structure and its low gate forward charge.
The IRFR3704TRRPBF has numerous applications across a wide range of industries. It is used to provide load switching in consumer electronics such as amplifiers, audio systems, and computers. It is also used in automotive applications, providing gate control for automotive relays and fuel injectors. In addition, it is used in telecommunications and lighting systems, battery powered systems, and in industrial applications such as current sensing, and motor control.
In summary, the IRFR3704TRRPBF is a single-finger MOSFET that provides a low operating voltage and low on-resistance. It is ideally suited for low frequency switching applications, due to its low gate to source capacitance, and low thermal resistance. It is also used in automotive applications and a wide range of other applications across industries as it provides good current handling capability and a high dV/dt rating.
The specific data is subject to PDF, and the above content is for reference
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